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We present a predictive modeling approach for pattern-dependent etch processes implemented in a 3D virtual fabrication software platform. This technique combines long-range effects using design data and short-range effects using predictive 3D models of the design-technology interaction. For the first time, this type of pattern-dependent predictive capability is integrated into a full 3D virtual fabrication...
Because of an ongoing shift to FinFETs/ultra-thin body SOI based devices for the 22nm node and beyond, mobility enhancement in such structures is an important issue. Stress engineering used by the semiconductor industry to boost mobility was predicted to become less efficient in ultra-thin SOI structures due to the less pronounced dependence of the transport effective mass on strain. Using the k •...
A phonon transport simulator using a Monte Carlo method is used to analyze the heat conduction properties in FinFET structure. We compare the simulation results to those obtained from the conventional heat conduction equation based on the Fourier's law, and discuss about the discrepancies attributed to ballistic transport effect. We also analyze the impact of additional heat path through gate contact,...
This paper presents a novel methodology to design a compact but precise SPICE (Simulation Program with Integrated Circuit Emphasis) model which reproduces complete current-voltage (I-V) characteristics of Silicon Carbide (SiC) power devices. The methodology is based on duality relation between one function for the forward I-V characteristics and its inverse function for the reverse I-V characteristics...
Continuous advances in computer hardware and solving algorithm enable more pervasive use of 3D TCAD simulations for both nanoscale and power semiconductor devices. However, while BiMOS power semiconductor devices such as IGBTs require relatively small 3D simulated structures (of the order of fa 10×10×1000/im3), bipolar power devices such as thyristors require much larger simulated structures of the...
This paper presents atomistic simulation results about the performance limits of electron mobility in SiGe-channel nFinFETs, where phonon- and alloy-scattering-limited mobility are calculated based on the empirical tight-binding and the valence force field methods without any mobility fitting parameters. The effect of the changes in the fin thickness and sidewall orientation, SiGe alloy mole fraction,...
The effect of hydrogen incorporation into nitrogen vacancies in silicon nitride on electron trap is analyzed using density functional theory method. A hydrogen atom is attached to a dangling bond which is well separated from other dangling bonds, whereas it is not attached to ones which strongly interact because of lattice distortion. An electron trap level caused by nitrogen vacancy becomes shallow...
This paper presents a comprehensive investigation on retention behavior for three-dimensional charge trapping NAND flash memory by two-dimensional self-consistent simulation. Major physical mechanisms, including tunneling, charge trapping and de-trapping process as well as drift-diffusion have been incorporated into the simulator. The developed simulator is able to describe the charge transport along...
The performance of uniaxially strained Si nanowires (SiNWs) is investigated with the multiband k.p method. A rigorous quantum-mechanical calculation of hole current based on the non-equilibrium Green's function (NEGF) method is carried out. For both unstrained/strained-SiNWs, the necessity of using the tuned k.p parameters instead of the bulk k.p parameters for nano-scaled devices is examined by benchmarking...
The momentum relaxation time (MRT) is widely used to simplify low-field mobility calculations including anisotropic scattering processes. Although not always fully justified, it has been very practical in simulating transport in bulk and in low-dimensional carrier gases alike. We review the assumptions behind the MRT, quantify the error introduced by its usage for low-dimensional carrier gases, and...
Ultra-high speed image sensors have been developed and applied to various field of science and engineering. Toward the temporal resolution of 1ns, we have proposed a new structure of an image sensor, a backside-illuminated multi-collection-gate image sensor (BSI MCG image sensor). In order to evaluate the performance, it is necessary to simulate the paths of photoelectrons from the generation site...
Conditions for terahertz (THz) radiation due to the plasma-wave instability in the channel of HEMTs are re-examined by considering the electron viscosity in carrier hydrodynamic transport. Not only the DC output I-V characteristics are affected, but also the window for plasma-wave instability is altered by the term with viscosity in the transport equation. The solution procedure and numerical study...
The impacts of FinFET channel and extension S/D region implantations on relevant device parameters such as electrostatic control and Vth mismatch (MM) are investigated. We used 3D TCAD process and device simulations to gain physical understanding and to optimize the performance/variability of bulk-FinFETs. For the first time, the full FinFET process flow simulation was performed using diffusion, activation...
In this paper we present the development of a 3D Multi Subband Ensemble Monte Carlo (3DMSB-EMC) tool targeting the simulation of nanoscaled FinFETs and nanowire transistors. In order to deliver computational efficiency, we have developed a self-consistent framework that couples a MSB-EMC transport engine for a 1D electron gas with a 3DPoisson-2DSchro¨dinger solver. Here we use a FinFET with a physical...
A TCAD model for Chalcogenide based CBRAM is presented. This model starts from an existing model and uses an advanced level set method to follow the growth of the filament in the electrolyte. We couple the level set method with equations which model the cations migration and the electric field in the electrolyte and in the filament. We take into account silver clusters in the electrolyte in order...
An electro-thermal resistive switching model based on O-Frenkel pairs is presented. This model relies on partial differential equations and is used to simulate reset and set mechanisms for HfO2-based RRAM devices starting from an existing conductive filament. First simulations indicate that the model can fairly reproduce experimental ON and OFF resistances.
We demonstrate a dynamic Verilog-A RRAM compact model capable of simulating real-time DC cycling and pulsed operation device behavior, including random variability that is inherent to RRAM. This paper illustrates the physics and capabilities of the model. The model is verified using different sets of experimental data. The DC/Pulse parameter fitting methodology are illustrated.
We present a physical circuit model for polarization reversal dynamics in ferroelectrics, which is implemented in Verilog-A, validated with PZT measurements and applicable in all operation modes for bulk, epitaxial and polycrystalline thin films. Consistent treatment of field-driven polarization not only gives accurate step-voltage responses across many decades in time, but also reproduces frequency...
The hopping transport in organic semiconductors produces characteristic frequency dependencies of the admittance and noise, which are calculated in this paper for the first time based on the master equation approach, where noise is evaluated by the Langevin approach and a modified Ramo-Shockley theorem. At low frequencies and low injection the non-equilibrium noise is found to be shot noise in the...
The deterministic solution of the coupled Boltzmann transport equations for electrons and holes is calculated by means of the spherical harmonics expansion method for avalanche breakdown of a pn-junction. An iteration scheme based on a splitting of the system matrix is presented, by which a stable solution of this numerically challenging problem can be obtained.
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