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The design and measured performance of wideband, high power GaN SPDT and SP3T MMIC switches in low-cost overmolded plastic package is presented. The switches operate in the 0.15–2.8 GHz band with class-leading CW input power handling of 50W, low insertion loss and excellent isolation. The reflective switches employ a series/shunt circuit architecture, fully integrated input and output matching using...
This paper discusses an approach taken to extract a virtual X-parameter (vX-parameter) model for a 500W L-Band internally matched device (IMD). X-parameters are essentially an open form of nonlinear data format that can be directly extracted from an NVNA and can be used in a circuit simulator as non-linear models. However, for very high power devices, the NVNA and its required peripheral components...
FET cells used in high power amplifier designs often require large gate-to-gate spacing (pitch) in order to manage the heating due to the large power dissipation inside the cell and keep the channel temperature below the critical level. However, as the technology is advanced to achieve FETs with higher ft and fmax frequencies, FET cell with large gate-to-gate pitch can become prone to internal oscillation...
A CW 100W MMIC limiter covering 2-5GHz band is presented using TriQuint's 2MI GaAs VPIN process. The new architecture uses a binary power splitter topology to distribute the input power equally to all the input anti-parallel diodes, resulting in higher input power handling capability. The limiter is able to withstand more than 100W of input power with flat leakage less than 16 dBm. The insertion loss...
A high-efficiency class F MMIC power amplifier designed at 4 GHz using AlGaN/GaN HEMT technology is presented. At VDS = 20 V the circuit produced 69 % PAE, 30.4 dBm of output power and gain of 11.4 dB. When the drain bias was increased to 35 V, the circuit produced 60% PAE, 34.3 dBm of output power and gain of 12.3 dBm, corresponding to a power density of 5.36 W/mm. The results show significant improvement...
A MMIC frequency doubler using the AlGaN/GaN HEMT technology is presented in this letter. At the design frequency of f0 = 4 GHz and VDS = 35 V the circuit produced maximum output power of 30 dBm with a conversion gain of 5.5 dB, and maximum conversion gain of 13.8 dB with output power of 23 dBm and output fundamental suppression of more than 11 dBc. The best output fundamental suppression was achieved...
A scalable non‐linear large signal model based on the ADS EE_HEMT model was developed for AlGaN/GaN HEMTs for use in linear and non‐linear circuit design. Excellent agreement between simulations and measurements was obtained for the DC, small signal and large signal power and efficiency performance including load‐pull and source‐pull contours. Excellent scalability of the model was also demonstrated...
Two high-efficiency Class E MMIC power amplifiers designed at 4 GHz using AlGaN/GaN HEMT technology are presented. The first circuit was designed using a 0.5 mm (4 × 125 μm) HEMT and when biased at 25 V drain bias it produced 61 % PAE, 33.8 dBm of output power and maximum gain of 14.8 dB. The second circuit used a 1 mm (8 × 125 μm) HEMT and at 30 V drain bias it produced 57% PAE, 36 dBm of output...
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