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This paper discusses the technology trends behind the energy transition happening in the energy system of modern cities, linked to electrification, decentralization and digitalization. The role of power electronics, with a focus on building-level technologies, and the derived future requirements for converters and components are discussed. It is demonstrated using relevant use cases that power electronics...
While the future of the world economy is uncertain, the robotic market is steadily growing. This growth is not only quantitatively expansive in the robotic market, but there is growth in related technological markets, such as networking. In this paper, I discuss the current trends in the robotic market and current problems that are being considered. Then I discuss how Yaskawa Electric is dealing with...
In this paper, the evolvement of power supply with wide bandgap semiconductor, including SiC and GaN devices, is reviewed. Different circuit features are analyzed with unique device characteristics. By employing GaN HEMTs, the power convertor hardware is compared with conventional design. The detailed architecture of convertor is given to evaluate the trend of the next generation power convertors...
Gallium Nitride is an emerging technology that is enabling major advances in power electronics. Power integrated circuits are now emerging in the market and showing unprecedented efficiency, density, and system cost advantages. This paper reviews the beginnings of power integrated circuit techniques, leading to present implementations in advanced IC products, and forecasts future directions for the...
GaN's properties of low Coss, Crss, and lack of reverse recovery make it a more efficient power switch versus silicon. These characteristics enable higher-frequency hard-switched topologies such as totem-pole bridgeless power factor converter (PFC) that cannot be realized by silicon MOSFETs and insulated-gate bipolar transistors (IGBTs) due to their high switching losses. To take advantages of these...
The emerging trend of internet of things (IoT) and artificial intelligence (AI) technologies will bring about a major change in power electronics and create a new generation of the power electronics (Power Electronics 2.0). To enable the IoT- and Al-assisted Power Electronics 2.0, the integration of the sensors, the programmable hardware, and VLSIs for the controller into the power devices/modules...
Fast switching operation of power electronics systems is significantly advantageous for reducing volume of passive components and increasing power density in the systems. Next generation power devices, such as GaN gate-injection transistor (GIT), are promising for high frequency operations and isolated gate driving is also highly recommended owing to its noise robustness. In this paper, we propose...
The paper presents an integrated digital communication technique for sending gate signal and gate driver configuration data. As an application example, the developed CMOS gate driver carries the digital data through an optical isolation, in the context of wide bandgap power transistors. The receiver chip integrates all the required functions from the optical receiver to the signal processing circuit...
For higher-voltage SiC modules, larger SBD chips are required as free-wheel diodes to suppress current conduction of the body diodes of MOSFETs, which causes bipolar degradation following the expansion of stacking faults. By embedding an SBD into each unit cell of a 6.5 kV SiC-MOSFET, we achieved, without using external SBDs, a high-voltage switching device that is free from bipolar degradation. Expansion...
A junction barrier controlled Schottky rectifier integrated silicon carbide MOSFET (SiC JMOS) is proposed in this paper, which merged a double implanted MOSFET (DMOS) and junction barrier controlled Schottky diode (JBS) in a monolithic SiC device without any additional process and area penalty. JMOS device in this work exhibits a lower reverse conduction voltage drop than conventional SiC DMOS. There...
A silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) for 10-kV application is proposed in this paper, which features a built-in Schottky barrier diode (SBD). Therefore, the body diode is free from activation during the third quadrant conduction state, which is beneficial for reducing the switching loss and suppressing bipolar degradation. Numerical simulations with Sentaurus...
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