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We examine current and electric field waveforms produced by lightning strikes initiated from the Gaisberg Tower located in Salzburg, Austria. Current was measured at the top of the tower and electric field measured simultaneously at close (170 m from the tower), and far (79 or 109 km from the tower) distances. In this preliminary study, we establish the criteria for characterizing current and electric...
Overhead distribution lines are usually subject to voltage transients during thunderstorms. Lightning flashes, whether direct or indirect, are one of the main causes of power quality disturbances on the electric grid. In this paper, a methodology to establish a correlation between the incidence point of a lightning flash, the stroke current amplitude and polarity and its effects on the electric distribution...
We analyzed wideband electric field waveforms of 965 compact intracloud discharges (CIDs) that were recorded by the Lightning Detection and Waveform Storage System (LDWSS) operating at the Lightning Observatory in Gainesville (LOG), Florida, during August 2016. The data were acquired for discharges that occurred within 500 km of the LOG. CIDs, which may represent a serious threat to airborne vehicles,...
We developed a label-free biosensor based on light scattering from polystyrene beads and dielectrophoresis spectroscopy that can identify single stranded DNA. We have demonstrated this method using DNA strands with 16, 17, and 26 base pairs of nucleotides.
An isosceles right Triangular Microstrip Antenna (TMA) is investigated here for triple band application. Simple cavity model theory is used to investigate the isosceles 45°–45°–90° TMA. Two different isosceles 45°–45°–90° TMAs are demonstrated for triple band dual polarized antenna. Finite Element Method (FEM) based commercially available numerical 3D EM simulator HFSS is also used here to verify...
Source gated transistors (SGTs) are field effect devices with operating characteristics desirable for both analog and digital operation. Unlike in conventional transistors, the length of the source electrode, S, may play an important role in the behavior of SGTs. Optimizing the source region geometry according to mode of operation (dominant mechanism of current injection) leads to larger saturated...
Non-stationary excitation of six electrical dipoles on a plane that form the correct hexagon is considered. The problem is solved analytically in time domain by the vector potential method. The radiated non-stationary field is compared with the field of one dipole with the same total excitation current and the equivalent length.
A novel N-JFET structure, combined with an innovative control gate between the uniform P-top and source is proposed. Control gate has a heavily doped P-type and a gap to uniform P-top. Pinch-off voltage of the JFET device can be easily adjusted by the size of the gap, while the breakdown voltage can be kept in the range of 700V ∼ 800V. Rather than using 3D simulation which is more time consuming,...
Conventional Extended gate STI based LDMOS devices often have an overlap between gate and STI resulting in higher impact ionization at the STI left edge. In this work, we have proposed and analyzed a novel split gate architecture to reduce impact ionization and improve off-state breakdown voltage. The underlying physics behind the improved characteristics of the proposed architecture is explained...
This paper presents the effect of side diffusion and doping concentration profile produced by two different ion implantation model for UHV LDMOS device with Linear P-top and its effect on device performance. The result shows that the device using Monte Carlo Model have different side diffusion with different N-Epi layer background whereas Taurus Table is unable to explain the side diffusion and Monte...
For power semiconductor devices, such as IGBTs, MOSFETs and FRDs, a high area efficiency of the edge termination structure can enlarge the active area and thus improve the current capacity for a given chip area. In this paper, a double-sided edge termination (DSET) is proposed for the first time. Simulation results show that it can improve the breakdown voltage by about 42% without increasing the...
A novel SOI trench LDMOS with vertical double-RESURF is studied in this paper. A p-type silicon pillar is inserted beside the oxide trench as a vertical double RESURF layer, which can effectively modulate the electronic field and enhance the doping concentration in the drift region. The drain n+ region extends to the surface of buried oxide layer, shortening the motion-path in the high-resistance...
Upward flashes can be self-initiated or triggered-initiated. Locations where the tall structures are installed may present only triggering initiated upward flashes, only self-initiated or even both types of upward flashes. Upward flashes that were observed in Sao Paulo and Rapid City were all triggered-initiated by previous activity. This paper will present three triggering components of the triggering...
Ionospheric reflection heights for VLF/LF electromagnetic waves were estimated using electric field waveforms of negative cloud-to-ground return strokes (-CGs) and compact intracloud discharges (CIDs) that occurred in the same thunderstorm over the Gulf of Mexico. We analyzed 42 CG and 42 CID waveforms that were observed at night between 2 and 4 a.m. (Local Time) on August 7, 2016. All the lightning...
In this paper, we present and discuss simultaneous records of current and wideband electric field waveforms at 380 km distance from the strike point associated with an upward bipolar flash initiated from the Säntis Tower. The flash contains 23 negative strokes and one positive stroke. The height of the ionospheric reflection for the positive pulse was inferred to be about 94.9 km, a value which is...
In this paper, low cost 1200V UHV LDMOS device has been proposed. As BVD and Ron are contradictory, so to make low Ron, high breakdown voltage is the challenge of this paper. The key feature of this device is the linear P-top which is used to obtain best charge balance, and increase the diffusion current to move faster in the drift region which reduces the electric field and substantially helps to...
For the first time, this paper reveals and explains the detailed contribution of the main-junction lateral resistive zone to the ruggedness of high-voltage fast recovery diodes during a harsh reverse recovery. And its optimized width is discussed.
This paper presents an innovative 500V LDMOS device is constructed by SCR structure, a thin oxide and poly resistor. This structure can improve the self-protection capability of LDMOS for Electrostatic Discharge (ESD), because this structure can distribute current from the drain to the poly resistor, so the transistor effect occurs earlier. After sequential ESD zapping applied on this device, lattice...
The influence of different short circuit (SC) test conditions, including bias voltages and case temperature, on the degradation of Silicon Carbide (SiC) MOSFETs performance is investigated. Sentaurus TCAD is utilized with the trap degradation model included in the simulations to assess the density of hot holes trapped in the gate oxide during this procedure. Simulation results demonstrate that higher...
Calculation results of attachment probability to conductors of 220–500 kV overhead transmission lines without shielding wire depending on polarity of instantaneous voltage are presented. For overhead lines with a horizontal arrangement of conductors without shielding wire the probability that a negatively charged lightning will strike to a positively charged phase rather than to a negatively charged...
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