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This paper presents a hybrid multilevel inverter with DC bypass. Mixed modulation method is proposed to balance dc voltage, and enables Si devices & wide bandgap devices integration to reduce power loss and achieve high power density. Simulation results are firstly provided to verify the validity of the proposed approach.
This work presents a study of the changes in the optical, morphological and compositional properties of SiOC thin films obtained by hot wire chemical vapor deposition (HWCVD) technique. A mixture of hydrogen (H2), oxygen (O2) and monomethyl-silane (MMS) was used as reactant gas, which was passed through a tantalum filament (Ta) in order to be decomposed and obtained the film. Changes were made in...
The photosensing properties related to the structure of GeSi/TiO2 multilayers prepared under different conditions are studied. TiO2 cap/(GeSi/TiO2)2 multilayers (ML) were deposited by magnetron sputtering (MS) and annealed by rapid thermal annealing. Trilayers of TiO2 cap/GeSi/TiO2 (TL) were also deposited using reactive high power impulse MS (HiPIMS) for TiO2 layers and dc MS for the GeSi layer....
This paper proposes a hypothetic silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) power module for the medium voltage (MV) variable frequency drive (VFD). A peer-to-peer comparison between commercial silicon (Si) insulated-gate bipolar transistor (IGBT) and the proposed SiC MOSFET module results in some promising results to support the introduction of SiC power modules...
The medium voltage (MV) high-speed drives are required for traction, wind energy, marine, aerospace, oil, and gas compressors applications. The MV converter must be able to switch at higher switching frequencies (> 5 kHz) to generate higher fundamental frequency AC input voltages for the motor (≥ 500 Hz) and thereby achieving high speed at the motor output (≥ 15000 rpm). This paper presents the...
In this paper, we simulate and investigate a novel Tunnel Field-Effect Transistor (TFET) using the charge plasma concept on the source side. Herein, an inverted p-type source is created to form a p+-n tunneling diode structure on a uniformly n-type doped thin silicon film, hence named, Inverted-TFET (I-TFET). Using calibrated simulations, we verify that the Ion is boosted (□ 20 times) in the proposed...
In this study, the influence of a temperature annealing process on the crystallographic orientation and sheet resistance of Pt/Ti films is investigated. Varying parameters are the annealing temperatures ranging between 450°C and 700°C and the atmosphere of the annealing process, which consists of either air, forming gas and argon gas. The thickness of the Pt/Ti film and the time of the annealing process...
The introduction in the semiconductor market of the SiC technology enables power designers the development of power converters with higher power density (W/m3) in comparison with the traditional converters based on Si power semiconductors. This work presents the redesign of a DC-DC converter, used in railway traction applications with full-SiC modules. The low current rating of the actual full-SiC...
Embedded grids have been increasingly adopted into applications such as More Electric Aircraft where different power converters are interconnected to each other. Interactions between the grid components poses the risk of instability to the system, more so when in the presence of reduced passive filters. An approach of automated and scalable tuning of such embedded grids with consideration for the...
Safety Instrumented Systems (SIS) act as important safety barriers in industrial systems for preventing hazardous accidents. It is therefore significant to study the reliability issues of SIS. As a matter of fact, SIS have common behaviors such as periodic test policies to discover dangerous undetected failures. Modeling patterns capitalize the experience from modeling SIS. By reusing modeling patterns,...
In this paper, a 60 GHz CMOS on-chip dipole antenna with loss-reduced silicon substrate, which had been proposed and simulated by the authors, was measured and gain improvement of approximately 9 dB was obtained. In the antenna, rectangular region with 500 μm × 1000 μm around the dipole is irradiated by proton and conductivity is reduced from 10 S/m (10 Ω cm) to 0.1 S/m (1 kΩ cm). Antenna gain of...
This paper focuses on recognizing the correct match of star identification among multiple possible candidates for star trackers. Derived from the perturbation theory, a tolerance criterion is proposed and proved to check the correctness of the candidates. A recognition algorithm is then proposed based on the tolerance criterion to select the correct match. Compared to traditional recognition algorithms,...
The recently emerging SiC devices provide a promising solution to improve power converter efficiency and power density. However the expensive cost limited the widely use of SiC device. The parallel connection of SiC MOSFET and Si IGBT is introduced in this paper to utilize the advantage of this two different kinds of devices and proposed corresponding switching strategies. The switching loss and current...
Silicon carbide (SiC) devices have its unique advantages of high operating temperature, high voltage capability with low switching losses when compared to its silicon counterparts. This paper presents a systematic method for long-term reliability analysis for SiC devices. The reliability block diagrams (RBDs) have been established for a SiC power module with standard wire-bonded package. The reliability...
This article proposes a power converter solution for 1.5 kV DC photovoltaic applications and benchmark the benefits of commercially available SiC MOSFETS for the system power efficiency. The circuit solution is based on a full power factor three-level active neutral-point-clamped converter featuring reduced numbers of high-frequency switched semiconductors. A combination of Si IGBT and SiC MOSFET...
The modular multilevel converter (MMC) is attractive for medium-or high-power applications because of the advantages of its high modularity, availability, and high power quality. Reliability is one of the most important challenges for the MMC consisting of a large number of submodules (SMs). The capacitor monitoring in each SM of the MMC is an important issue, which would affect the performance of...
Developing an accurate activity recognition system with sensor readings is a challenging task due to the fact that sensors are subjected to a variety of errors and the nature of human activities is dynamic and uncertainties. Recent studies have shown that machine learning approaches can effectively classify human activities. In this study, we analyze sensor readings from accelerometers and gyroscopes...
In this work, we propose a full-duplex relay (FDR) network for secure communication in the presence of an eavesdropper. We consider both the destination and the amplify-and-forward relay has a full-duplex capability for a higher rate and/or a stronger secrecy performance. In particular, the destination transmits a cooperative jamming signal while receiving the relayed signal. To get analytic understanding,...
DC transmission has a lot of merits compared with AC transmission. For example, the cost of the construction and the equipment is less than that of the AC transmission system. Besides, more energy can be transmitted in DC transmission lines. Recently, multi-terminal transmission lines are required urgently. For that purpose, the reliable DC transmission circuit breakers must be developed. As we all...
An overview of the state-of-the art of the ongoing research on high-k gate dielectrics for the advanced nano-CMOS technology is presented. The most promising high-k candidates for next-generation MOS devices are highlighted. The associated performance degradation and the scaling limitations of these high-k materials are also discussed and emerging solutions and optimization schemes for the subnanometer...
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