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For memory devices, focus has been on Ag alloybonding wire as a low-cost alternative to Au bonding wire. However, Ag bonding wire has lower long-term bond reliabilitythan Au bonding wire under high temperature and humidityconditions. Past research has mainly been concerned withenhancing the bond reliability by Pd doping into the Agbonding wire. On the other hand, Ag-Pd alloy bonding wire haspractical...
Fixing the doping dosage in VT implant process, as the doping energy is lower; contributing the good p-n junction controllability, the punch-through voltage (VPT) at 6keV doping energy is greater than that at 10keV, no matter what the long-channel devices are. This phenomenon is similar to the trend of the DIBL values for channel width = 0.12μm at 10keV are slightly larger than that at 6keV, too.
We report for the first time a TCAD investigation on the spatial distribution of carrier injection at MoS2 contacts. The proposed semi-classical approach successfully captures the experimentally observed contact behavior. Using the model, we identify that for monolayer and bilayer MoS2, the carriers are injected at the edge of the contact metal, resulting in a high contact resistance. The primary...
An innovative and improved UMOS device structure, with gate oxide 900 to 1500A, breakdown voltage 40 to 100V, robust to hot carrier injection (HCI) stress is proposed. We demonstrate and report the effect of p-type and n-type doping in gate oxide and poly-gate region can improve HCI performance significantly. The UMOSFETs HCI, response to doping in the gate oxide and poly-gate is been studied.
In this work, a trench power MOSFET (UMOS) with vertical RESURF is investigated. And the influence of some key parameters on UMOS static performances are simulated and analyzed by TCAD-Process. The proposed RESURF conventional trench gate UMOS is able to achieve better UIS performance while maintaining a specific low on state-resistance with breakdown voltage over 100 Volts. Here we are proposing...
The electronic properties of armchair graphene nanoribbons (AGNRs) is changed by using different modulation methods. In this paper, the electronic properties of defected AGNRs is studied. The defected AGNRs are introduced by imposing hexagonal topologies of antidotes and Boron/Nitride doping in the middle of pristine nanoribbons which leads to antidote and doped super-lattice of AGNRs (ASL-AGNRs and...
In recent years we have witnessed many breakthroughs in the field of graphene nanoribbons. The promising features of these structures have created new opportunities in manufacturing electronic devices. However, due to the low precision of synthesizing procedures, process variation is still as a concerning challenge in developing nanoscale devices. In this paper, we have theoretically studied the impact...
In this work, the HfO2 and LiF have been used to improve the piezoelectric behavior of Li0.058(K0.480Na0.535)0.966(Nb0.9Ta0.1)O3(LKNNT) lead-free ceramics prepared by the conventional solid-state method. The addition of little amount HfO2/LiF co-doped will not change the phase structure of LKNNT ceramics. In this study, due to the co-doping of HfO2/LiF. The relative density of LKNNT can up to 98.73%,...
This paper proposes a 500V U-shaped channel silicon-on-insulator lateral insulated gate bipolar transistor (SOI-LIGBT) with dual trenches to improve the trade-off between the saturation voltage (VCEsat) and the turn-off loss (Eoff). The proposed dual trenches U-shaped channel (DTU) SOI-LIGBT features a U-shaped gate trench (Gl) and a U-shaped hole barrier trench (G2). By employing the dual trenches,...
A novel concept for a BCD technology is presented which comprises the processing of the wafer on the thinned backside and which offers — similar to SOI technology — a full dielectric isolation of power devices. Limitations of the breakdown voltage of p-LDMOS encountered in conventional BCD technologies are overcome by replacing the commonly applied deep n well layer by an n+ region formed on the wafer...
This paper proposes a simple and efficient method to improve hot carrier (HC) immunity of p-channel LDMOSFET without degrading typical figure of merits such as breakdown voltage BV and specific on-resistance Rsp. The superiority of a novel STI-based p-channel LDMOSFET with a hot electron cooling (HEC) layer against the conventional method to improve HC immunity (i.e. extending the p-drift length)...
An innovative and improved UMOSFET device with low specific on-resistance maintain desired breakdown voltage up to 100V. In this proposed device, p-pillar under the p+ region UMOS structure has been developed and successfully simulated by using 2D simulation. The proposed structure can reduce the electric field near the trench gate UMOSFET. The trench gate with p-pillar increase the drift region doping...
A design methodology to optimize the drift region doping properties in trench Schottky rectifiers has been presented. Advanced lithography is being used for trench devices that are designed for smaller die sizes in wireless applications. Such devices feature narrow active trenches to maximize active area utilization in combination with a wide termination trench to support the breakdown voltage. Such...
The enhanced performance of a Symmetrical Double Gate Junctionless MOSFET (DG JL MOSFET) is presented using Germanium Material as Source. The characteristics of Ge-Source DG JL MOSFET are compared with Si-Source and demonstrated by simulating with Sentaurus TCAD Toolkit. Germanium with high mobility and lower band gap provides an improvement in various parameters like On Current (Ion), Off current...
A 600–800 V, BCD technology platform is presented in ultra-high voltage applications. An innovative feature is that all the devices have been realized by using a fully implanted technology in a p-type single crystal without an epitaxial or a buried layer. Ultra-high voltage triple RESURF LDMOS with the breakdown voltage up to 600–800V as well as low voltage CMOS and BJT have been achieved using this...
The electronic structures and densities of states of the spinel CdIn2S4 crystals have been investigated using the first-principle density function theory and pseudopotential method in this paper. The results show that CdIn2S4 is an indirect semiconductor with the band gap of 1.44 eV. Cu doping can narrow the band gap of CdIn2S4 to 0.88 eV. The calculated results indicate that Cu doping may be one...
In this paper, we investigate the impact of Sb and N doping in Se rich GeSe based Ovonic Threshold Switching (OTS) selector devices, targeting crossbar memory applications. Through physico- chemical analysis and electrical characterization we demonstrate that Sb doping allows low threshold voltage switching operations, while N doping improves the OFF state resistance stability of Se rich GeSe based...
The Al doping effects on retention of HfOx based resistive switching memory were studied in detail using density functional theory. Al doping has many merits such as reducing forming voltage, improving uniformity and enhancing the ON state retention, but it was found to deteriorate the OFF state retention. This study finds that the migration barriers of oxygen vacancies in and out of the filament...
In today's diversified semiconductor supply-chain, protecting intellectual property (IP) and maintaining manufacturing integrity are important concerns. Circuit obfuscation techniques such as logic encryption and IC camouflaging can potentially defend against a majority of supply-chain threats such as stealthy malicious design modification, IP theft, overproduction, and cloning. Recently, a Boolean...
One of the major challenge with CMOS circuits with 22nm technology & beyond is to buried the issues of increasing in power dissipation of the circuits due to higher order effects & leakage current. The traditional transistor or MOSFET require significant amount of power so the circuit present on the chip will require a large amount of power due to presence of many transistors in the circuit...
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