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The proposed design of LNA uses common gate topology as an amplifying section. Noise cancelling technique is used and special emphasis is laid on the use of active resistors so that overall Noise figure is minimized and gain is enhanced. Simulation is done on ADS tool using 0.18µm technology. Power supply provided is 1.8V. Maximum gain achieved is 14.774dB. Noise figure achieved is 1dB to 1.6 dB over...
In this paper, the design of a wideband LNA employing simultaneously noise cancellation and a linearisation technique is presented. The designed LNA consists of a cross-coupled common-gate topology for wideband matching and noise cancellation. Also, a linearisation technique is used in order to cancel out third order nonlinearities. The proposed LNA is designed in a 130 nm CMOS technology. It has...
The development and characterization of an extremely compact, ultra-low-power, and detuning-robust Low Noise Amplifier (LNA) for Wireless Body Area Network (WBAN) applications is presented in this paper. The amplifier is designed and then implemented with only seven high-density surface-mount components. The noise figure is as low as 1:5 dB with an associated power gain of 6.2 dB while it consumes...
In order to support a wide set of communication standards and to accommodate different applications in a single device, broadband receivers are essential and inevitably in demand. A wideband low-noise amplifier (LNA), which is a key block in the design of broadband receivers for multiband wireless communication standards, is proposed. A differential common-gate (CG) LNA utilizing multiple-feedback...
A fully integrated low power LNA is implemented using 65-nm RF CMOS technology for 2.14-GHz band. By taking the advantage of higher transition frequency of recent technologies, transistors are biased in the moderate inversion region and this permitted scaling down the supply voltage to 0.7 V. Further, the exploration of design spaces from strong to weak inversion led to the development of a low power...
A low-voltage low-power CMOS ZigBee receiver front-end supporting 780/868/915/2400MHz bands is presented in this paper. The wideband common-gate (CG) low noise amplifier (LNA) and the I/Q current-commutating mixer are merged in a single circuit, sharing the bias current. Active trans-conductance (gm) boosting technique is utilized in the design of the presented receiver front-end. The topology and...
This paper presents a methodology for selecting the architecture and optimizing the circuit design for the first block in a current-mode receiver chain, the low noise transconductance amplifier (LNTA). This methodology includes system-level considerations to select circuit design techniques for noise cancellation, linearity improvement and power reduction. The methodology is applied on an LNTA design...
This work proposes an inductorless wideband low noise amplifier (LNA) for multistandard applications. This LNA is based on a self-biased complementary current-reuse common source amplifier on the forward path and a source follower on the feedback, using a gyrator-C like effect to create real valued impedance and an inductive effect, achieving wideband input matching. Designed in IBM 130 nm CMOS process,...
In this paper a highly-linear software defined radio front-end (LNA and Mixer) for wireless sensor networks in the 5.8-to-13 GHz frequency range is presented. It is suitable to IEEE 802.15.4a and IEEE 802.15.4a and upcoming different standards. The RF front-end features a very high robustness to out-of-band interference (OBI) thanks to mixer-based RF blocker filtering. This allows to remove any dedicated...
This paper presents the design and experimental results of a concurrent dual-band 2.4/5.2GHz low-noise amplifier. To achieve the concurrent gain and impedance matching at the both bands, input and output matching using two poles matching and LC resonant network are implementation, respectively. In low-noise amplifier using gain enhanced technique in order to improve gain since LC resonant matching...
Wide-band receivers at mm-waves enable several Gbit/s communications with simple modulation. This work presents the design of an ultra wide-band LNA in 28nm CMOS. Common source stages are stacked in a current-sharing configuration and coupled through third-order L-C band-pass networks. In addition, the stages are stagger-tuned to maximize bandwidth and gain flatness. Realized prototypes show 23dB...
We propose an 80GHz low noise amplifier capable of linearly handling and canceling a TX spillover up to −20dBm. The cancellation circuit is mainly intended for phase-modulated continuous-wave radar. The circuit is implemented in a 28nm CMOS technology and achieves a gain, NF and iP1dB of 15.2dB, 5.5dB and −15.5dBm respectively, while attenuating the TX spillover by 13.5dB.
This paper presents the design of a cascaded two stage low noise amplifier (LNA) for Ku band applications. Hetero Junction Field Effect Transistor (HJFET) is used as an active device to realize low noise figure. Multi stage amplifiers have been designed to obtain increased gain than a single stage amplifier. In this work, two perfectly matched circuits have been cascaded to make the design simpler...
A low-power CMOS mmWave passive mixer based on a novel LO shaping technique using non-linear transmission line (NLTL) is proposed. The mixer employs a non-return-to-zero (NRZ) capacitive loaded sampling structure. The LO signal is reshaped by an NLTL before it is applied to the mixer, which alleviates the tradeoff between the mixer gain and linearity and decreases the noise figure (NF). The NLTL is...
A double active gm-boosted-based inductorless differential wideband low-noise amplifier (LNA) is proposed in this paper. The proposed LNA applies two common-gate (CG) stages and the capacitive cross-coupled (CCC) technique. Moreover, a noise-cancelling architecture is adopted for low noise factor (NF). The proposed LNA is simulated in a TSMC 0.18-µm RF CMOS process.Within DC-1.2GHz, the LNA achieves...
This paper presents a wide band LNA for the IEEE 802.11 WLAN. The LNA uses two feedback paths to enhance linearity and in-band gain ripple. The −3 dB bandwidth is 4 GHz with center frequency of 4.7 GHz. The current reuse technique is utilized to reduce the power consumption and the noise figure (NF). Post-Layout simulation results demonstrate that the achievable input third-order intercept point (IIP3)...
In this paper the analysis of DRAM logic compatible 3T cell has been shown. Due to its high density and low cost of memory, it is universally used by the advanced processor for on chip data and program memory. DRAM has transistor-capacitor cell structure, where capacitor is charged to produce 1 or 0. Memory array, which is arranged in row and column, is word line and bit line respectively. Here I...
In this paper, a self-biased resistive-feedback current-reused CMOS low-noise amplifier (LNA) is presented for impulse-radio ultra-wideband (IR-UWB) applications. Wideband input, inter-stage, and output matching are achieved by using two stages of resistive-feedback amplifiers with inductive peaking. Consequently, high and flat power gain (S21), low and highly-flat noise figure (NF), and small group-delay...
An ESD-protected GNSS LNA, implemented in 0.18μm SOI CMOS process, uses only one external series inductor as input matching. The input common-source transistor is biased in weak inversion region and operates at Class-AB mode, which greatly improves linearity and saves quiescent current. A bond wire to ground is adopted as source-degeneration and to realize input matching. Design trade-offs among NF,...
In this paper, a highly linear, inductively degenerated, common source narrowband LNA is presented. An extremely simple feed-forward distortion circuit (FDC) which consists of an appropriately sized ac-coupled diode connected NMOS is proposed. This circuit generates distortion components at output, when added at the input node as a feed forward element (M6). These distortion components partially cancel...
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