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The effect of H plasma exposure parameters, such as power, pressure and temperature, on the Si-SiO2 interface is investigated. Inductively coupled photoconductivity decay measurements indicate an increase in carrier recombination at the surfaces following atomic hydrogen exposure, as measured by an increase in the emitter saturation current density. This increase is chiefly due to the generation of...
In this abstract, we demonstrate a single gate nitride deposition process (using standard PECVD growth) which is optimum for stability for both low-field driving and high-field switching applications. Furthermore, the nitride deposition temperature is limited to 300??C which is compatible with high temperature clear plastic substrates, unlike the previous best low-field results which required 350??C.
The electrical characterization of ZrO2-based MIS structures fabricated by ALD on SiO2/Si substrates with monocyclopentadienyls of zirconium, ZrCp(NMe2)3, as precursors was carried out. These precursors combine the beneficial properties related to the high thermal stability of the Cp compounds with the high growth rate and tendency of forming high permittivity cubic or tetragonal ZrO2 phases of the...
Since the very beginning of the flash memory era, the market has been dominated by the floating gate technology. However, as floating gate flash continues along a very steep scaling path, more and more barriers start to appear, limiting further scaling possibilities of the technology. At the same time, other concepts are preparing to take over. This paper concentrates on the prospect of high-k materials...
Simple ring-oscillator circuit has been used to estimate the degradation in circuit performance due to negative bias temperature instability (NBTI) effect but it fails to isolate the degradation from the NBTI for PMOS and the positive bias temperature instability (PBTI) for NMOS in high-K dielectric/metal gate CMOS technology. In this paper, we propose new circuit structures which monitor the NBTI...
In this paper, we present a new method to fabricate N-face GaN/AlGaN HEMTs based on the substrate removal of a Ga-face AlGaN/GaN layer grown on Si. A new substrate removal and transfer technology with no degradation to the GaN active layer. This technology has allowed the fabrication of N-face GaN transistors with record sheet resistance values. The Ga-face surface was bonded to a Si carrier wafer...
ldquoDevelopment for advanced thermoelectric conversion systemsrdquo supported by the new energy and industrial technology development organization (NEDO) has been successfully completed as one of the Japanese national energy conservation projects. Three types of the cascaded thermoelectric modules operating up to 850 K in high electrode temperature and two types of Bi-Te thermoelectric modules operating...
A 53 dB gain limiting amplifier for OC-192 and 10 GbE applications is developed in a 50 GHz fT SiGe SOI complimentary bipolar process, and has 5 mV pk-pk sensitivity, 1.25 V pk-pk maximum input signal, 14 ps (20/80%) rise/fall times and 450 mV pk-pk output into matched differential 50 Ohm loads, consuming 430 mW on a 3.3 V supply. Input Cherry-Hooper gain stages limit the -3 dB bandwidth to 11 GHz...
The integration aspects of a self-aligned CoSi2 technology in a submicron CMOS process are described. The effect of substrate type and doping on the final sheet resistance of CoSi2 was investigated. No significant influence on the sheet resistance of the finally formed CoSi2 measured, appart from an effect on the formation of the intermediate CoSi phase. The stability of CoSi2 at high temperature...
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