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The resonance properties of the metasurface were obtained using the pseudo-spectral time domain method. The frequency dependence of transmission and absorption of sub-THz waves passed through metasurface have been measured.
Germanium-based photonics or photovoltaics applications require precise knowledge of the optical constants (refractive index, absorption coefficient, dielectric function) for Ge and GeO2 over a broad spectral range. Unfortunately, we don't know as much about these as for Si and SiO2. We therefore apply the same technique to Ge (spectroscopic ellipsometry with multi-sample analysis), which was used...
A novel 3D MOSFET device concept with reduced intrinsic capacitances shows promise for performance improvements at advanced nodes, based upon physics-based TCAD analyses.
The understanding of the switching mechanisms in resistive random access memory is of interest as one can use the fundamental mechanisms to better design the memory structure for enhancing both switching and reliability performance. Various analytical methods have been explored to better understand the wear-out and eventual failure mechanisms of RRAM stacks. This includes atomic-scale characterization...
This paper presents a D-band Frustum Pyramid dielectric resonator antenna (DRA) based on a coplanar-waveguide (CPW) fed for 148, and 175-GHz millimeter-wave application. The DRA takes the shape of a truncated apex pyramid. Fabrication of the Pyramid DRA is performed with wet etching of Si using KOH solution along the crystalline surfaces to fabricate the pyramid like shape. The second mask is used...
This paper introduces a disc resonator antenna with compact size and wide band for THz applications. The disc antenna is design based on modified SOG technology platform from high resistivity Si. A Dielectric Waveguide (DWG) is matched with the disc dielectric antenna using CPW feed. The CPW feed is fabricated on the Pyrex side of the Si wafer bonded to the Pyrex. The proposed antenna is designed...
A circularly polarized patch antenna array series-fed by a slot line is proposed to achieve a high gain for Terahertz applications. The antenna array consists of 24 pairs of hybrid patch elements, a slot feeding line based on high-resistance silicon, and a tapered dielectric transition transmitting the signal from the rectangular waveguide to the slot. Simulated results show that the proposed antenna...
The trends of recent technology are moving towards building system on panel (SOP), system on glass (SOG) or ‘see through’ display technologies as well as towards large area flexible electronics with cost effective process[1]-[2]. Therefore the technologists are focused on developing fully spin-coated low cost sol-gel Thin Film Transistor (TFT) with solution processed Indium Gallium Zinc Oxide (IGZO)...
A phenomenological model of mobile charge Na+, K+ transport in ultrathin films of silicon oxide with a blocking inhomogeneous boundary is developed. Boundary and initial conditionals of the ion currents calculation problem in diffusion — drift approximation taking into account the heterogeneity of the interface within the framework of the developed model are defined.
In this paper, we investigate the curvature effects on the electronic band structure and dielectric function of single-walled silicon nanotubes based on tight-binding method. The curvature nature of nanotubes causes radius-dependent σ-π-orbital hybridization which leads to optimization of tight-binding model for each radii. First, the effects of orbitals overlap and the structural optimization on...
A FinFET doping method with PSG/BSG glass mimic doping was presented and a simplified process flow was introduced. Numerical simulation and experiment results of sheet resistance and SIMS profiles indicated a uniform doping of the 3D FinFET structure with the presented method, by using a proper dielectric layer and conducting an optimized subsequent annealing process.
This paper describes the improvement of advanced semi-additive processes (SAP) to demonstrate 1.5-5 µm lines and spaces with 4-5 µm diameter photo-vias for multiple re-distribution layers (RDL) at 20 µm bump pitch on glass interposers. High performance computing systems for networking and graphics are driving ultra-high bandwidth interconnections between logic and memory devices. This signal bandwidth...
The requirement of IC packages with fine line features has increased significantly. Semi-Additive Process (SAP) is the traditional way to make copper trace in the organic substrate. However, inadequate adhesion of fine line to dielectric materials occurred in manufacturing for line/space less than 5/5µm. Line embedded (LE) is another way to form fine circuitry. LE technology has several advantages...
A novel multi-chips Fan-out Wafer Level Package (FOWLP) with fine pitch Cu pillar bumps was presented to accommodate volumes of I/O requirements on a BGA organic substrate. Due to the manufacturing limitation, cost and reliability consideration of fine-pitch BGA substrate, chips with extremely fine pitch RDL routing (width/space=2/2um) and a 2.nD wafer level carrier was integrated as system-in-package...
TSV backside reveal is one of the key process modules for enabling 2.5D integration. This paper presents a robust and low cost solution for TSV backside reveal. 300mm wafers with a TSV size of 10µm×100µm are used to evaluate the proposed backside reveal solution. A high selective wet etching process with an etch rate of about 15 µm/min is used to replace conventional Si dry etching step for Si recess...
This paper describes and demonstrates a high-throughput strategy for making fan-out packages for very small, sub-millimeter, devices. First, micro-transfer printing was used to deterministically assemble large arrays of devices, face-up, onto 200 mm wafers. The devices used in this study were 80 um x 40 um chips with a redistribution metal and six contact pads designed to be used as an electrical...
Current TSV integration schemes include via-first, via-middle and via-last process flows. In this paper, a low thermal budget, 10ìm pitch and aspect ratio 10 (5ìm diameter, 50ìm depth) via-last TSV module is presented. The proposed via-last module is plugged in after the thinning module, with 50ìm thinned device wafers temporary bonded to a Si carrier, using Brewer Science Zonebond® material. After...
In this paper, some key fundamental aspects of Metal / Insulator / Semiconductor contacts as well as practical issues occurring with their implementation are reviewed in order to fully comprehend the opportunities and limitations of this approach.
In this paper, a two dimensional charge plasma based Single and hetero-gate dielectric Si0.5Ge0.5 doping-less tunnel field effect transistor (DL-TFET) is reported. Further, a comparative analysis of Si Single and hetero-gate dielectric DL-TFETs with Si0.5Ge0.5 Single and hetero-gate dielectric DL-TFETs are also presented for better understanding. The proposed Si0.5Ge0.5 DL-TFETs shows an improved...
This paper presents observation of oscillations in TWT simulations at a frequency close to the band edge frequency when the electron beam is not well-focused and well-aligned. The cause of the oscillations is suggested to be backward-wave oscillations.
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