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Security is a critical challenge for modern embedded, mobile, and IoT devices. One the one hand, these devices contain sensitive assets that must be protected from unauthorized access. On the other hand, high design complexity, aggressive time-to-market, and a complex, global supply-chain provide numerous opportunities for introduction of errors, vulnerabilities, and security backdoors that can be...
Quantum-well infrared photodetectors (QWIPs) have become research focus in recent years due to its many inherent properties. However, the measurement of internal parameters is very difficult; instead, computer simulation and device modeling provide a better way to analyze quantum structure devices. In order to solve this issue, the electronics performance and the optical performance of a QWIP fabricated...
An automatic testing system to perform repetitive short-circuit tests on megawatt-scale IGBT power modules is presented and described in this paper, pointing out the advantages and features of such testing approach. The developed system is based on a non-destructive short-circuit tester, which has been integrated with an advanced software tool and a semiconductor device analyzer to perform stress...
The rise in dynamic and static power dissipation with increase in device density poses impediments in circuit applications which is accounted as one of the major issues in microelectronic industry. Tunnel FETs which are gated reverse biased p-i-n diodes where ON current would be due to band-to-band tunneling, exhibiting very low OFF current, and offer potential solution for power dissipation. In the...
The floating-point multiplier or divider is one of the important functional devices on the VLSI processor chips, and the minimization of its ‘delay-time∗silicon-area’ product[1] has been the problem.
We analyze Defragmentation-as-a-Service (DaaS) in elastic optical networks and show that the positive effect of defragmentation depends on the rate at which it is performed, load (or, call arrival rates) and the available resources.
We propose a sharply bent (5 μm) multimode Silicon waveguide with mode extinction ratio over 22.8 dB from 1500 to 1600nm. A comparable performance can be achieved compared with conventional scheme with 40 μm radius.
The trends for smartphone and other mobile devices are more than ever for integration and lower cost. Meanwhile, a higher degree of functionality and performance, thinner profile, and longer battery life are some of the additional market drivers seen in these devices. The implications of these market drivers on the packaging content of mobile devices including internet of things (IoT) and wearable...
MOSFET type photodetectors, also known as phototransistors, have the advantages of not only high photo sensitivity and responsivity, but also integrability into conventional CMOS chips. In this work, flexible phototransistors with a back gate configuration based on transferrable single crystalline Si nanomembrane (Si NM) have been demonstrated [1–3]. The schematic illustration of the device fabrication...
Thin-film solar cells made with polymer and perovskite absorbers represent a transformative technology with great potentials for high-throughput manufacturing at very low cost. Efforts in the design, processing, and engineering of π-conjugated molecule and polymers have enabled significantly enhanced performance and stability of such organic and hybrid electronic devices, through which the light-harvest,...
Our recent progresses in epitaxial Ge-on-Si technology are presented from the viewpoints of near-infrared (NIR) photonic device applications. In Si photonics, high-quality Ge layers on Si are inevitably required for NIR photodetectors with high-speed and high-efficiency operations together with a low noise operation. Epitaxial growth of Ge on Si is useful for the monolithic integrations, while a high...
To satisfy the ever-increasing transmission demands of optical communications, a polarization division multiplexing (PDM) offers an efficient solution in manipulating optical signals for photonic integrated circuits (PICs). In between, a polarization beam splitter (PBS), which can separate transverse-electric (TE) and transverse-magnetic (TM) modes, is most important devices for PDM and allows the...
Optical elements and devices based on metallic metasurface, with periodic micronano structures sitting on a substrate, have advantages such as ultra-thinness, broadband response and large extending angles. However, the relatively low efficiency is still a big problem and would hold back their practical applications. Though high performance metasurface devices such as hologram with 80% optical efficiency...
Physically Unclonable Functions (PUFs) were introduced over a decade ago for a variety of security applications. Silicon PUFs exploit uncontrollable random variations from manufacturing to generate unique and random signatures/responses. Existing research on PUFs has focused on either PUF design at the architectural level or optimization of lithography to increase sensitivity to random process variations...
High voltage, pulse power Silicon Carbide (SiC) thyristors have been under development at GE Global Research Center for the past decade. Previous tests of these relatively mature devices have shown that they can reliably hold off high voltages (> 3 kV) at extremely low leakage currents (nanoamps), and carry high pulse currents (> 1.5 kA) on microseconds timescales, while surviving millions of...
This paper surveys various advanced mathematical tools in monitoring system electrical power quality. It also addresses the characterization of one of the major power quality issues, namely Voltage Dips. Some of the advantages of employing advanced mathematical tools in aspects of power quality are the aim to reduce complication and length of electrical networks. This leads to electrical equipments...
Power semiconductor devices are one of the most essential components in electrical vehicles. Traditionally, silicon has been used as the semiconductor material in switching devices. Si material has reached its technological limits like switching frequency, maximum operation temperature etc., which lead to exploring new semiconductor materials for switching devices. In this paper Wide Band-Gap materials...
A novel 3D MOSFET device concept with reduced intrinsic capacitances shows promise for performance improvements at advanced nodes, based upon physics-based TCAD analyses.
This keynote talk discusses challenges and directions for research on silicon and silicon-like devices as the industry approaches the end of the CMOS scaling era.
This work reports a comparison of high-k Al2O3/HfO2/Al2O3 dielectric stack Tunnel FETs with both vertical tunneling and lateral tunneling, as non-volatile memory (NVM) cells. Tunnel FET NVM are fabricated and characterized to evaluate their potential as low power memory operation. These memory cells can be programmed with voltages from −10V to −15V (p type devices) and show extremely stable memory...
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