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A polarization converter (PC) based on the mode coupling in a hybrid plasmonic waveguide (HPW) is proposed. This PC comprises a Si core, a low index insulator layer surrounding the Si core, and two asymmetrically arranged Ag strips. Two orthogonal hybrid polarization modes are excited within the low index insulator layer. By exploiting the mode characteristics of these two hybrid polarization modes,...
We propose and numerically simulate a 2×2 Digital Optical Switch (DOS) based on silicon-on-insulator (SOI) adiabatic coupler for TE polarizations at 1550nm. The simulation results acquired by Beam-Propagation-Method (BPM) reveal that the cross-talk (CT) levels are below −27dB over a broadband of 60nm. Small simulated insertion-losses (ILs) below 0.1dB are obtained between the wavelengths 1520nm to...
Nonlinear carrier recombination dynamics is characterized in a 450 nm × 220 nm silicon nanowire by employing a time-resolved pump-and-probe experiment. Our results show that the recombination rate is faster at the early stages of the decay as compared to the final stages, in agreement with trap-assisted mechanism. We have also demonstrated that by operating at high carrier density, faster excess carrier...
We propose a silicon 2×2 optical switch which can simultaneous manipulate wavelength division multiplexing and mode division multiplexing signals. It is composed of broadband mode multiplexers, demultiplexers and single mode optical switch elements. For demonstration, we design and fabricate a prototype device using asymmetric directional coupler and Mach-Zehnder optical switch elements which can...
We show the design of a DAC-less PAM-4 optical modulator operating at 1550 nm wavelength based on integrated silicon waveguides embedded with graphene in capacitor-like structures on the top and below the waveguide's core. By balancing the optical modal distribution interacting with the graphene through the waveguide design, it is possible to perform direct modulation of PAM-4 signals aiming the next...
This work addresses analysis of hybrid plasmonic/dielectric metamaterials operated in guided wave configurations in the near-infrared domain (» = 1.5 µm). The objective is to achieve an efficient control over the flow of the light in the waveguide using effective index variation induced by metasurface resonances. Specifically we consider a composite guiding structure made of a 2D plasmonic metasurface...
Optical modulation in the O-Band using a Mach-Zehnder modulator in push-pull configuration is presented and experimentally demonstrated. Open eye diagrams at 25 GBps have been obtained with more than 8 dB extinction ratio with an active length of only 1 mm.
Realizing CMOS-compatible integrated lasers on silicon is a crucial step towards cost-efficient, high-functional optoelectronic integrated circuits (OEICs). Here, we report on a concept to embed active optical devices based on a bonded III–V epitaxial layer stack between the FEOL and BEOL of a CMOS silicon photonics chip. Ultra-shallow laser devices are realized with this concept and optically-pumped...
We propose an ultra-compact solid-state auto-correlator fabricated by Si photonics technology. The correlation waveform is obtained by detecting the overlap of two slow-light pulses counter-propagating in a photonic crystal waveguide integrated with two-photon absorption photodiode array. Since the device does not need a mechanical delay scanner, the full integration on a silicon-on-insulator, easy...
We exploit a SiN/Si double-layer platform for an ultra-low crosstalk multi-port optical switch that exhibits −50 dB crosstalk in a bandwidth wider than the C-band. The platform possesses full compatibility with a silicon photonics platform.
We study ultrafast spectral characteristics of our ultra-short ultra-slicon rich nitride (USRN) waveguide with large Kerr nonlinearity (γ∼550W−1/m) and negligible nonlinear loss. The output spectra of USRN ring resonator and short-length waveguide broaden around 2 times and 4 times wider than that in 500 fs input pulses, respectively. Negligible nonlinear loss including two-photon absorption at near-infrared...
Mid-Infrared (mid-IR) photonic using barium titanate (BaTiO3) thin films are demonstrated through the complementary metal-oxide-semiconductor (CMOS) process. The BaTiO3 thin films have broad infrared transmittance between λ = 2.5 μm to λ = 7 um. Our waveguides show a fundamental mode over broad mid-IR regime. With the broad mid-IR transparency and electro-optic (E-O) property, our BaTiO3 platform...
We theoretically investigate the nonlinear loss impacted nonlinear effects in a silicon waveguide, targeting a highest four-wave-mixing efficiency. A simple and accurate formula for optimal length calculation is derived, providing a promising criterion to accurately design the nonlinear waveguide.
We demonstrate a single-drive parallel-push-pull silicon optical modulator. When optically biased at the quadrature point, the device has an extinction ratio of 3.1 dB at the speed of 20 Gbps and under the driving voltage of 1.8 Vpp.
We demonstrate a four-port optical switch for the photonic network-on-chip architecture, which contains four silicon Mach-Zehnder optical switch elements tuned by the plasma dispersion effect. The optical signal-to-noise ratio of the device is over 10.0 dB in the wavelength range from 1525 nm to 1565 nm. Its 10%–90% rise time and fall time are 2 ns.
We numerically demonstrate dispersion tailoring of a silicon strip waveguide employing Titania-Alumina thin-film coating using a finite-difference mode solver. The proposed structure exhibits spectrally-flattened near-zero anomalous dispersion within the telecom wavelength range. We also numerically predict the wavelength conversion efficiency for degenerate four-wave mixing, and obtain a 3 dB bandwidth...
A compact subwavelength grating (SWG) based polarization rotator (PR) for silicon-based cross-slot waveguides is proposed and analyzed. By replacing the diagonal regular Si wires with the SWGs, the rotation region is constructed. Numerical results show that a PR of 12.6 μm in length at the wavelength of 1.55 μm is achieved and the polarization conversion efficiency and insertion loss are, respectively,...
Considering a Ge-on-Si waveguide p-i-n photodetector structure inspired by the literature, we have investigated the role of the detector geometry on its electrical and optical (O/E) bandwidth. Due to the structural complexity of the detector, three-dimensional coupled optical and electrical simulations were needed to implement an accurate model. To make an extensive 3D optimization study possible...
We demonstrate a fully integrated photonic network-on-chip (NoC) circuit comprising of more than 400 components realized in heterogeneous silicon photonic process offering 2.56 Tbps transmission capacity.
Commercial CAD tools for carrier transport simulation in optoelectronic devices are commonly based on the drift-diffusion (DD) model. In the design of silicon photonics optical interconnects, the DD approach can be acceptable for p-i-n photodetectors, but may be inadequate for avalanche photodiodes (APDs). Here we discuss the DD limitations in the case of waveguide Ge-on-Si SACM APDs, and we investigate...
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