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We present a novel suspended Si waveguide approach for hybrid near-infrared and mid-infrared operation. Large waveguide cross-sections allow mid-infrared propagation, while an original corrugation yields effective single-mode near-infrared operation. Exploiting this concept, we demonstrated Bragg filters with 4 nm bandwidth and 40 dB rejection.
We report on the integration by transfer printing of III-V Fabry-Perot cavities on a silicon photonic circuit. We pre-process the III-V coupons on their native substrate, transfer print onto the target SOI, and post-process the printed coupons. We report light coupling into the photonic circuit.
We demonstrate a three-terminal waveguide avalanche photodiode detector (3TAPD) with −6V breakdown voltage, 18.6GHz 3dB bandwidth. Design, simulation of the device is discussed.
Temperature-insensitive silicon MZI with local heaters is fabricated by DUV lithography. Temperature dependence is less than 5pm/°C but the wavelength can be tuned by the local heater at the efficiency of 24mW/FSR. The results are discussed in comparison with permanent wavelength trimming by thermal annealing.
We present a comprehensive study of deposited silicon microring resonators for photonic-integrated circuitry. Refractive index, thickness, and widths variations are estimated. The statistical deviations are sufficiently low to realize photonic circuits of high quality for instance deposited on various substrates and integrated with heterogeneous materials.
We fabricated counter-doped ring resonator modulators that guarantee the absence of unexpected p-i-n junctions in the ring waveguide due to overlay misalignments inherent to successive lithographic steps. Fabricated ring resonator modulators showed good efficiency (VπL at 1.55 V.cm at −1V) and transmission at 10 Gb.s−1.
In this work we present the design, fabrication and characterization of a silicon photonics Mach-Zehnder modulator (MZM) with resonant electrode. The device shows an enhanced modulation response in the 20GHz frequency range compared to a standard traveling-wave MZM.
A 2D integrating cell waveguide platform is presented where ultra-long optical path lengths in a small area are realized by multiple reflections of a guided signal at PhC boundaries. In experiments, path lengths of 25 cm are demonstrated in integrating cells with 1.8 mm radius.
We demonstrate low-loss mid infrared photonic integrated components fabricated on a Ge-rich Si1−xGex platform. These devices show broadband operation over a wavelength range of at least from λ ≈ 5.1 μm to λ ≈ 8.6 μm, and comprise waveguides, multimode interference couplers and Mach-Zehnder interferometers.
A method is proposed for locking the resonance of a high-bandwidth, silicon micro-ring modulator using intrinsic-defect-mediated-photon-absorption. The photo-signal is generated by the modulator, and thus the need for a waveguide tap is negated. A digital PID loop is used for stabilization.
Post-fabrication trimming of a silicon micro-ring resonator is demonstrated using an electrically mediated process. The resonance of a fully fabricated ring is permanently blue-shifted by 240pm after diffusion from local reservoirs of boron dopant. Thermal energy is supplied by an integrated heater.
We report on the integration of carbon nanotubes in silicon micro-cavities to develop cost-effective light sources. Strong light coupling from carbon nanotubes was demonstrated into silicon photonics resonators, nanobeam cavities and photonic crystals.
We present an interlayer slope waveguide, designed to guide light from one level to another level in a multilayer silicon photonics platform. The waveguide is fabricated using HWCVD a-Si:H at 350oC. Measured loss of 0.5 dB/slope was obtained at a wavelength of 1550 nm and for TE mode polarization.
Germanium-on-silicon rib waveguides are modelled, fabricated and characterized with a novel near-field infrared spectroscopy technique that allows on-chip investigation of the waveguide losses at 5.8 μm wavelength.
We report on miniaturized spectroscopic sensors that are realized using Silicon Photonics technology. This technology relies on CMOS compatible processes to fabricate both Silicon and Silicon-Nitride based photonics integrated circuits. Various spectroscopic sensor designs and applications are discussed.
We report on experimental results of silicon micro-ring resonators based on non-resonant photonic metamaterial waveguides. High extinction ratio up to 30 dB and loaded Q-factors in a range of 1500 to 6000 were achieved at a wavelength of 1550nm.
A modelling platform for active carrier removal based on metal-semiconductor-metal structure is reported on analysis of carrier dynamics. The analysis reveals electric current hot spots exist in geometric singularities and curly trajectory of carriers should be considered when accurately estimating the effective carrier lifetime.
We proposed a versatile polarizer independent with the polarization of the incident light by coating the graphene on the silicon waveguide. The proposed polarizer works at two operation states: TE-pass state and TM-pass state, where the variation of mode effective index is different for the two states. Therefore it is able to combine TE-pass and TM-pass polarizer into one single component. The proposed...
We present the concept and design of a hybrid integrated widely tunable III-V-on-silicon ring laser with 80 nm tuning range by means of theoretical investigation. Laser spontaneous emission is provided by two gain chips, one for the C band and the other for the L band. Gain chip sections are duplexed into the silicon photonic passive cavity using a lattice filter. Wavelength tunability is proposed...
We propose a scheme to realize polarization rotation (PR) based on SOI by using two mode converters and a phase shifter. Simulation results from 3D-FDTD show that the PR has extinction ratio (ER) larger than 20 dB and insertion loss less than 0.4 dB in an ultra-wide range from 1450 nm to 1650 nm for both TM0 and TE0. Moreover, the total length of the device is 33μm with a height of 220 nm.
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