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The Hydrogen Selective Emitter (HSE) is a self-aligned selective emitter for n-type silicon solar cells. In this study, Quinhydrone-methanol passivation is applied to hydrogenated boron emitters to extract emitter saturation current density (J0e) data using photoconductance lifetime measurements. Etch-back studies are performed to extract J0e vs. Rsh curves of counterpart boron emitters (hydrogenated...
IBC cells with Front Floating Emitter (FFE) pose different design challenges compared to more conventional IBC cells with FSF (Front Surface Field). The FFE enables hole transport over distances that are large compared to the typical BSF or emitter width. The core of the cell design is commonly a device simulation in which, because of the computer resources involved, typically one simulates an as...
A key pathway to meeting the Department of Energy SunShot 2020 goals is to reduce financing costs by improving investor confidence through improved photovoltaic (PV) module reliability. A comprehensive approach to further understand and improve PV reliability includes characterization techniques and modeling from module to atomic scale. Imaging techniques, which include photoluminescence, electroluminescence,...
High power lasers are attractive for low-cost solar cell fabrication. However, laser process can generate crystal lattice defects that would decrease the photovoltaic efficiency. This study examines the effect of long pulsed laser annealing for improving the cell efficiency and results are compared with the short pulsed laser and furnace annealing. Results show that long pulsed laser annealing is...
The effect of varying plasma etching process time on alkaline textured mono-crystalline silicon has been investigated and applied for industrial process. Reduced surface reflectance is observed for longer plasma etching process time, with the tradeoff having lower effective carrier lifetime induced by plasma damage. The degradation is further caused by the mismatch of the surface morphology and ionic...
Random pyramids are the most widely used texture in monocrystalline silicon solar cells for reducing front-surface reflection and trapping weakly absorbed light. In prior efforts to evaluate the light-trapping performance of random pyramids through optical simulations, the base angle of the pyramids was assumed to be 54.7°, as is expected from the orientation of the crystallographic planes. In this...
Tandem solar cells made from III-V layers grown on silicon have the potential for high efficiencies at relatively low cost. Recent work has produced a GaAsP/SiGe tandem with over 20% efficiency based on indoor measurements. In this work, improvements are made to this device and outdoor performance is reported for the first time. Light trapping and substrate thinning techniques developed on a SiGe...
In this study we present a cascaded solar cell with a heterostructure consisting of p-i-n-n-i-p regions. The detailed structure starts with the bottom layer of 0.01μm thin film p-doped (1017cm−3) c-Si, followed by 0.44μm thick intrinsic (c-Si) layer, covered by 0.1μm thin n-doped (1016cm−3) c-Si. Next floor of the cascaded structure consists of larger energy gap material which is designed to be 0...
Passivated contacts based on low-pressure chemical vapor deposited (LPCVD) heavily-doped poly-Si and a thin SiOx layer are explored for the application in an interdigitated back contact (IBC) solar cell. The poly-Si/SiOx contacts are realized by applying wet-chemically grown SiOx tunnel layers and amorphous Si (a-Si) layers doped via ion implantation that are subsequently transformed into poly-Si/SiO...
Advanced cell characterization, through the measurement of effective lifetime and substrate doping at the cell level, as a supplement to conventional cell test parameters and an application to in-line solar cell testing is discussed in this paper. A variety of solar cell samples including Al BSF, monocrystalline PERC, and multi-crystalline PERC cells were measured using the Sinton Instruments FCT-750...
High quasi-Fermi-level splitting in monocrystalline n-type CdTe/MgCdTe double-heterostructures can be effectively extracted using p-type a-Si:H contacts, achieving Voc over 1 V. We show high-efficiency monocrystalline CdTe with Voc around 1V, evidencing a built-in voltage between p-type a-Si:H and n-CdTe of 1.1 V using capacitance-voltage measurements.
SunPower Corporation reports in this paper the first silicon solar cells with total area efficiency over 25 % This solar cell structure is an advanced version of the SunPower X-Series technology, which is in manufacturing at greater than 100 MW scale. Key improvements are in the area of edge loss and series resistance. Emitter recombination is also improved over previous solar cells. A loss analysis...
The interest of using Transparent Conductive Oxides (TCO's) as alternative contact layers on crystalline silicon (c-Si) homojunction solar cells is discussed in this paper. To evaluate the contact quality, vertical conductivity as well as passivation properties have been measured on symmetrical test structures showing either n+ or p+ surface doping, covered with an Indium Tin Oxide (ITO) layer deposited...
We developed a slimming process of Si nanowall aiming at the Si nanowall solar cell whose band gap is tuned by the quantum size effect. The width of Si nanowall was successfully reduced to 3 nm by using thermal oxidation. The density of states (DOS) in Si nanowall was measured by ultraviolet photoelectron spectroscopy. The 3-nm width Si nanowall showed DOS with stepwise shape which is completely different...
Monolithical integration of III-V and Si is of strong interest to produce tandem solar cells reaching high conversion efficiencies. In the context of the French ANR research project IMPETUS, an innovative approach for III-V/Si multijunction solar cells is studied. The targeted device is a tandem cell composed of a III-V top cell (AlGaAs) and a IV bottom cell (Si1−xGex). The choice of AlyGa1−yAs as...
We present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO2/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam-line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14–1E18 cm−2) at low ion energies (20 eV–10 keV). These benefits...
We have demonstrated the impact of buffer architectures on the performance of 1J GaAs solar cells heterogeneously integrated on Si. An all-epitaxial molecular beam epitaxy-grown thin (<1 μm) hybrid GaAs/Ge “virtual” buffer approach provided 1J GaAs cell efficiency of ∼10% on Si, as compared with cell structures with thick 3 μm GaAs buffers. Solar cell results were further corroborated with materials...
A new design for high efficiency silicon solar cells with the use of limited p-n junction area and point Al rear contact is proposed. In this work, planar test devices with different emitter area and spacing are fabricated to demonstrate the limited junction area (LIA) design can improve VOC for a well-designed cell structure. Interim lifetime and PL measurements during fabrication confirm lower dark...
The intermediate band solar cell (IBSC) concept aims to improve upon the Shockley-Queisser limit for single bandgap solar cells by also making use of below bandgap photons through sequential absorption processes via an intermediate band (IB). In order for this concept to be translated into more efficient solar cells there are still challenges to overcome; one of the most important is the increased...
Accurate determination, with nanometer scale spatial resolution, of the semiconductor electronic structure information via valence electron energy-loss spectroscopy (VEELS) is discussed. Specifically, the use of reduced accelerating voltages, higher collection angles, and thinner specimens is investigated. This discussion is applied to the heteroepitaxial GaP/Si materials system to analyze potential...
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