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The loss due to lateral current flow in top diffused layer is one of the most important mechanisms of loss associated with top contacts and can be a limiting factor causing the reduction of cell efficiency especially for cells made to operate at high sun concentrations, because of higher level of current density and voltage drop. To optimize the design of grid contact, it is necessary to know the...
We present the design of a silicon microsystem that utilizes dense, low-power photonic interconnects to enable a highly-compact supercomputer-scale system. We review recent progress in wavelength-division multiplexed, low-power silicon photonic interconnect components and discuss a future roadmap for the technology.
A wavelength selective reflector thermally tuned by semiconductor resistors placed in proximity to the microring elements is proposed as a mirror in a hybrid silicon tunable laser application. The Vernier effect is utilized to increase device free spectral range and decrease required temperature shifts.
This paper reports a 3-dimensional (3D) micro-optical coupling system for improving coupling efficiency in the Littrow configured micro-electro-mechanical system (MEMS) tunable lasers. In the coupling system, an optical fiber acts as a rod lens for light convergence in the vertical plane, while a deep-etched silicon parabolic mirror confines the light in the horizontal plane. Compared with previous...
We report design, fabrication and characterization of microelectromechanical systems (MEMS) enabled mechanically tunable 2D photonic crystal lens. The photonic crystal lens was realized by embedding honeycomb lattice silicon nano rods array inside flexible 10 μm thick SU-8 membrane. A pair of chevron shape nickel actuators was used to symmetrically stretch the 2D photonic crystal lens. The induced...
We present a method of engineering the waveguide core refractive index locally on a silicon photonic chip using subwavelength gratings. Applications such as efficient waveguide crossings, fiber-chip couplers and multiplexer circuits are discussed.
Subwavelegnth-sized nanolasers are achieved with InGaAs nanopillars monolithically grown on silicon using low-temperature MOCVD. The resonators support helically-propagating cavity modes providing strong feedback despite a very low index contrast with the silicon substrate.
By utilizing Si nanowires, ultracompact photonic integrated circuits are realized. Some Si hybrid plasmonic waveguides are also introduced for subwavelength optical confinement and low loss propagation. We review our recent work on Si nanophotonic integrated circuits and their applications.
BOOM is a photonic integration concept that aims to develop compact, cost-effective and power efficient silicon photonic components for high capacity routing functionalities. To accomplish this, flip-chip bonding and heterogeneous wafer scale fabrication techniques are employed that enable Si manufacturing with III-IV material processing. We present in this paper the second generation of BOOM devices...
A photonic crystal slab waveguide (PhC-WG) with an integrated MEMS bimorph cantilever actuator has been successfully fabricated using deep UV lithography and surface micromaching techniques. The cantilever is equipped with tips that are self-aligned with respect to the holes of the PhC-WG such that on electrostatic actuation, with modest voltages of less than 10 V, these tips move into the holes....
An interconnection scheme for chip-to-chip optical link has been proposed in this work where the silicon substrate of the driver integrated circuit (IC) is used as a subcarrier and also as a light path. This interconnection scheme uses a low loss high speed reconfigurable optical printed circuit board (REOPCB) for coupling light from one chip to the other. A multichip transmitter module has been fabricated...
We present a vertical-illumination-type 100% Ge-on-Si photodetector with the responsivity up to 0.93 A/W at λ~1.55 μm. The 10Gbps photoreceiver with a fabricated 60 μm-diameter device exhibits high sensitivity of -19.5 dBm for λ~1.55 μm.
We report a novel evanescent-coupled germanium electro-absorption modulator with a small active area of 16 μm2 giving an extinction ratio of ~dB for a wavelength range of 1580-1610 nm. In addition, monolithic integration of both evanescent-coupled Ge electro-absorption modulator and Ge p-i-n photodetector is demonstrated for the first time.
We demonstrate a hybrid silicon Mach-Zehnder modulator having a voltage-length product of 2.4 V-mm and chirp parameter of -0.75. This modulator also has a modulation bandwidth of 25 GHz.
Photonic waveguide bonds (PWB) enable three-dimensional chip-to-chip interconnects. We demonstrate for the first time a PWB link between integrated silicon-on-insulator waveguides. The viability of the concept is demonstrated by data transmission experiments.
We present a new bulk-Si optical platform for the optical interfaces toward DRAM integration with localized SOI structure and SPE. The demonstration shows that the waveguide and coupling loss are -0.61dB/mm and -2.6dB, respectively.
We present add-drop filters manufactured as ring resonators in commercial 130 nm SOI CMOS technology with thermal tuning. Their thermal impedance has been dramatically increased by the selective removal of the substrate resulting in a 20,12× increase in tuning efficiency for 100, 30 micron radius device.
Ge/Si avalanche photodiodes with record high gain-bandwidth and sensitivity for communication wavelength and high data rate, 10Gbps and 40Gbps, is demonstrated. These devices can be monolithically integrated with other silicon photonics components using CMOS technology.
We report first 3-Gb/s data measurements for a photonic link including a microring modulator connected optically by a waveguide to a Germanium detector. Error-free operation is achieved with a 2-dB electrical power penalty.
Various photonic devices covering passive to active functions have been developed and monolithically-integrated on a silicon wire waveguide platform. Obstacles to practical applications are being eliminated by applying state-of-art fabrication technologies and unique device designs.
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