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Conductivities of Si thin films crystallized in solid phase with/without YSZ layers by the two-step method with pulsed laser were investigated. The temperature dependences were also measured for both undoped and P-doped films using AC Hall effect measurement. It was found that the Si/YSZ/glass structure exhibited higher conductivities than those of the Si/glass. This suggested that the Si film crystallized...
Reducing the thickness of crystalline Si wafers to be processed into solar cells yields several significant benefits: PV module manufacturing cost can be reduced and the required diffusion length of minority carriers is smaller. The latter in turn enables a higher efficiency potential and a larger spread of Si materials to be employed for rear junction solar cell concepts which are advantageous for...
In present study infuence of different substrates and protective coatings on graphene electrical properties has been investigated. Hexagonal boron nitride (h-BN) was shown to ensure the highest conductivity and carrier mobility if graphene. MoS2 provided increase of carrier mobility compared to conventional SiO2 substrate. Utilization of GO and FG as a substrates and protective layers has been found...
We report a record setting low NMOS contact Rc of 2e−9 Ωcm2 with an all-silicon based solution. The ultra-low contact resistivity of Ti/Si system of 2e−9 Ωcm2 has been demonstrated with Highly Doped Si:P (HD Si:P) EPI layer which is compatible with FinFET S/D structures combined with millisecond laser anneal activation (DSA). Additionally, we show the pathway to further improve contact resistivity...
Based on physically-extended methodology, measurements and simulations show that implementing high-mobility materials and particularly alloys, such as a SiGe buffer for mobility enhancement in a Ge channel, can result in a 115% increase in self heating in the N7 node, compared to standard Si FinFETs.
Hybrid pixel detectors have been used as vertex detectors in most of the Large Hadron Collider (LHC) experiments. Their truly 3D hit information, together with their efficiency, speed and radiation resistance make them ideal to reconstruct track and vertices in the harsh environment surrounding the LHC interaction region. Many technological challenges have been overcome to build those devices according...
We investigate the effects of p a-Si:H emitter layer defects on n-type silicon heterojunction solar cells (SHJ) by experimental and simulated device analysis. Simulation of interdigitated back contact heterojunction (IBC-SHJ) solar cells shows that reducing the p-layer dangling bond density (Ddb) > 5×1018 cm−3eV−1 is an effective way to simultaneously increase VOC and FF. We use front and rear...
High performing p-type transparent conducting materials (TCMs) are a missing link in thin film photovoltaic technology. In particular, development of a low-temperature synthesis method for a p-type TCM could allow for novel solar cell architectures in devices with sensitive thermal budgets. Here, we have synthesized Cu-alloyed ZnS (CuZnS) at low temperature (T < 100°C), using both physical and...
In this paper, novel and promising high efficiency light-induced degradation (LID) free indium-doped Cz Si cells are presented. Two different commercial grade and large area B-doped Cz materials were included for comparison. Ion-implanted large area (239 and 242.22 cm2) screen printed full Al-BSF cells as well as passivated emitter rear contact (PERC) cells with oxide passivation and local aluminum...
A novel tunnel recombination junction (TRJ) consisted of n type hydrogenated microcrystalline silicon oxide (n-µc-SiOx:H) layer and p type hydrogenated nanocrystalline silicon oxide (p-nc-SiOx:H) layer was proposed in hydrogenated amorphous silicon/microcrystalline silicon (a-Si:H/µc-Si:H) tandem solar cell. The absence of n-µc-Si:H compared to conventional n-µc-SiOx:H/n-µc-Si:H/p-nc-SiOx:H TRJ reduced...
A basic but comprehensive theory and terminology that applies to all different types of contacts in silicon solar cells has, thus far, been elusive. In this paper, we show that, while there are many desirable characteristics that make a good contact, passivation and low majority-carrier resistance are the two crucial criteria. Since all solar cells have a high density of defects that cannot be reduced...
Al2O3 based nanolaminates provide new functionalities for silicon surface passivation layers in future high-efficient cell concepts. This work presents two different applications: (I) Symmetrical passivation layers for application on p- and n-type Si are realized with thin HfO2 and Al-doped SiO2 interface layers between Al2O3 and Si. These stacks have excellent chemical passivation but zero fixed...
Aluminium doped Zinc Oxide (AZO) thin films were deposited on SiO2/Si and glass substrates by Atomic Layer Deposition (ALD) in the temperature range of 150 °C – 250 °C. X-ray diffraction revealed the formation of c- axis oriented wurtzite phase of undoped ZnO films. The crystallinity of the films decreased with increasing pulse ratio of Zn:Al which indicating the incorporation of Al3+ in the ZnO lattice...
Indium doping of Cz and CCz mono-crystalline silicon has been investigated as a means to reduce lifetime degradation after light soaking in wafers and cells. The lifetime degradation is due to the formation of a metastable boron-oxygen complex (B-O pairs) during incipient carrier injection and is proposed to be the mechanism responsible for light-induced degradation in p-type solar cells doped with...
Heating of silicon substrates featuring different resistivity values by microwave annealing is investigated. The absorption of microwave energy for silicon wafers is found to be consistent with ohmic conduction loss theory. The strongest absorption occurs when the resistivity was around 10 Ω·cm. As the carrier concentration and the conductivity of silicon increase with temperature, the absorption...
Contact schemes for scaled Si, SiGe and Ge channel MOSFETs devices are discussed, consistent with an approach based on SiGe alloys with low Schottky Barrier Height (SBH) for pMOS and Si contacts for nMOS, making reduction of the SBH to nSi critical. Methods for SBH reduction, and their underlying mechanisms, are studied. Accurate cryogenic CV measurements were used to extract SBH. We show that chalcogenide...
Clathrate materials are extended Si, Ge and Sn cage-like solids with sp3-hybridized networks [1-2]. As a new generation of energy conversion materials, clathrates have received increasing attention over the past few years [3]. Clathrates with an open network are tailorable materials containing polyhedral cages, which can capture alkali metal, alkaline-earth metal and europium atoms. These atoms on...
Through silicon via (TSV) is one of the key components of the emerging 3D ICs. However, increasing number of TSVs in smaller silicon area leads to some severe negative impacts on the performance of the 3D IC. Growing signal integrity issues in TSVs is one of the major challenges of 3D integration. In this paper, different materials for the cores of the vias and the interposers are investigated to...
Tunable and Reconfigurable applications using RFSOI-on-HR (high resistivity) silicon technology are being deployed in increasing numbers in today's advanced RF cellular handsets in order to provide increasing data rates demanded by the consumer market. These RFSOI solutions are being deployed to meet the demanding specifications of complex 4G RF cellular front-ends with numerous transmit and receive...
The increasing demand for wireless data bandwidth and the rapid adoption of LTE and LTE Advanced standards push radio-frequency (RF) IC designers to develop devices with higher levels of integrated RF functions, meeting more and more stringent specification levels. The substrates on which those devices are manufactured play a major role in achieving that level of performance [1]. In this paper, Soitec...
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