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Non-binary low-density parity-check codes have better communication performance compared to their binary counterparts but they suffer from higher complexity, especially for the check node processing. In this paper a sorting of the input vectors based on a reliability criteria is performed prior to the check node processing. This presorting process allows the Extended Min-Sum (EMS) check node process...
Power density increase is one of the challenges of Wind Power Converters and the use of Silicon Carbide semiconductors is a promising solution due to the enhanced performance in terms of switching behaviour. This is demonstrated on an existing Wind Power Converter with a hybrid module of SiC based Diode and Silicon IGBT.
This paper investigates the switching performance of six-pack SiC MOSFET and Si IGBT modules for motor drive applications. Both the modules have same packaging and voltage rating (1.2 kV). The three bridge legs of the modules are paralleled forming a single half-bridge configuration for achieving higher output power. Turn-on and turn-off switching energy losses are measured using a standard double...
This paper analyses new model-predictive modulation strategies applied to hybrid Silicon Silicon-Carbide cascaded H-bridge (CHB) converters. The analysis identifies a suitable ratio of Silicon to Silicon-Carbide cells and the appropriate modulation strategy applied to this topology concept. The evaluation is based on semiconductor losses and harmonic performance.
The power delivered by a photovoltaic (PV) to the grid must be modified in multiple stages. The operation concept of the micro-inverter is to increase the low output voltage received from a PV panel. Wide bandgap (WBG) power devices such as SiC MOSFETs offer multiple advantages over traditional silicon power devices when are used in a solar energy field due to their high switching frequency, high...
This paper researches the performance benefits of replacing the Si IGBTs and diodes in a power module for automotive drives with either 650 V or 900 V SiC MOSFETs. Evaluating the mean conduction and switching losses in a load profile allows a comparison of both voltage classes in order to show which class offers the lower overall losses in the given application. Furthermore, the influence on the switching...
In this paper, we present for the first time, the experimental results of a “Bimode Cross Switch (BXS)-Hybrid” built with 3.3kV Silicon Enhanced Trench Bi-mode IGBTs (Si-ET-BIGT) and Silicon Carbide MOSFETs (SiC-MOSFET). Also, we have compared the static (on-state) and dynamic (switching) characteristics of the 3.3kV BXS-Hybrid (1 × Si-ET-BIGT + 2 × SiC-MOSFET) with the full SiC-MOSFET (4 × SiC-MOSFET)...
The design to cost is a major challenge for the practices of power modules' development especially when faced with very polymorphic demands. The technologies used are not always appropriate in view of the required technical specifications, or can be too expensive, or too basic. Developing a power module consists in making the best technological choices to fit the mission profile of an application;...
This paper is focused on the analysis of the cascode connection of Superjunction MOSFETs (SJ-FET) working as a high voltage normally-off power switch, based on Silicon technologies. In order to carry out this analysis, it will compare the cascode structure with the standalone connection, in which only one SJ-FET is used. The comparison is carried out in terms of switching behaviour, in order to verify...
This paper evaluates the SuperJunction MOSFET in cascode configuration with a low-voltage silicon MOSFET. The structure combines the good switching performance provided by the cascode configuration with advantages of the silicon technology as the robustness, the maturity and the low-cost. The objective of this paper is to elucidate and to demonstrate the reduction of switching losses of SuperJunction...
As the technology on wide bandgap materials such as gallium-nitride (GaN) has advanced rapidly, commercial GaN power devices with satisfying performance are available now. It is widely-known that GaN-based switching devices have several advantages over traditional Si-based switching devices, such as lower ON-resistance, faster switching speed, better thermal conductivity, and smaller size. However,...
Switching loss is an important and often the dominant source of converter losses. While soft-switching can greatly reduce the impact of switching loss, hard-switching is often preferred due to the simplicity of design, control, and implementation. Wide bandgap (WBG) semiconductors such as gallium nitride (GaN) and silicon carbide (SiC) have greatly reduced switching losses due to faster transition...
The wide band-gap Silicon Carbide (SiC) and gallium nitride (GaN) materials based semiconductor devices have attracted tremendous attentions in modern power electronics applications. They provide much higher switching frequency and higher junction temperature than silicon power devices, thus to significantly decrease the system volume and weight, especially on passive components. In this paper, the...
This paper investigates SiC power semiconductor devices in a three-phase active front-end Boost PWM rectifier for power conversion efficiency improvement. Different from Si IGBT based Boost PFC rectifier, the SiC MOSFET based Boost PFC rectifier can achieve the synchronous rectification by MOSFET channel reverse conduction for efficiency improvement. The operation principle difference of three-phase...
In this paper, an ultra-low inductance power cell design for a 3L-ANPC based on 650 V GaN HEMT devices is presented. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which are the main contributors to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance...
High voltage wide bandgap (WBG) semiconductor devices like the 15kV SiC MOSFET have attracted great attentions because of its potential applications in high voltage and high frequency power converters. However, these devices are not commercially available at the moment and their high cost due to expensive material growth and fabrication may limit their widespread adoption in the future. In this paper,...
The high switching frequency (> 20 kHz) of SiC MOSFET module makes it as an attractive alternative of Si IGBT module for high power density applications. Since SiC MOSFET and Si IGBT have the similar MOS-gated structure, it is normally regarded that the gate driver of SiC MOSFET can directly inherit from that of Si IGBT. However, considering the different device physics properties, some special...
From small voltage regulators to large motor drives, power electronics play a very important role in present day technology. The power electronics market is currently dominated by silicon based devices. However due to inherent limitations of silicon material they are approaching thermal limit in terms of high power and high temperature operation. Performance can only be improved with the development...
In this paper, a hybrid switch (HyS) consisting of a large silicon (Si) IGBT die in parallel with a small wide bandgap (WBG) die is proposed for generic power conversion drives. This HyS produces an inherent better conduction performance compared to the Si IGBT and WBG. A gate control option is recommended for minimum switching losses and switching frequency as high as 78 kHz can be achieved in HyS...
A terahertz (THz) dynamic switch with polarization dependence is proposed with MEMS metamaterial method. The split ring resonators (SRRs) are located on a silicon-on-insulator (SOI) wafer, where the buried oxide (BOX) is etched to let the silicon layer together with the SRRs work as an electromechanical shutter to control the incident THz wave propagation. Electrostatic actuation is employed for the...
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