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Third-harmonic generation spectroscopy of silicon oligomers and metasurfaces reveals the nonlinear spectra reshaping with electric and magnetic dipolar Mie-type resonances and up-conversion increase by two orders of magnitude as compared to the bulk silicon.
We demonstrate the automated calibration of a 5th-order silicon microring filter using an optimization algorithm. The procedure only requires a single input wavelength and was implemented on a microcontroller with simple ADC and DAC circuitry.
We demonstrate a novel materials technique for generating several hybrid solid state nano- and micro-photonic devices. Our approach combines the growth of nanoscale (∼100 nm) and micron scale (∼2 μm) diamonds on silicon carbide (3C and 4H polytype) substrate via chemical vapor deposition (CVD) from molecular diamond (‘diamondoid’) seed with the use of these particles as a hard mask for pattern transfer...
A compact broadband polarization beam splitter based on the augmented low index guiding scheme is proposed. TM and TE modes are separated in two layers with the TM mode confined in the lower index layer.
We design by transformation optics, fabricate by three-dimensional direct laser writing, and characterize experimentally polymer-based cloaks for 20 μm wide gold-wire contacts on a silicon wafer. The contact shadowing effect is reduced by 90%.
Free-standing thin-film flexible Si1−xGex saturable absorber with Si/Ge composition-ratio dependent saturable absorbance is demonstrated to passively mode-lock the erbium-doped fiber laser for delivering a pulsewidth of 330 fs at a modulation depth of 16%.
A cyclic arrayed waveguide grating (AWG) router based on silicon nanowire waveguides with uniform channel insertion loss is designed and experimentally demonstrated. Different from conventional design, the directions of arrayed waveguides are no longer pointed to the central output waveguide, but are adjusted according to a distribution function. The experimental results show that the channel insertion...
We present pseudo-single-crystal, direct band gap GeSn gain media fabricated at <450 °C on dielectric layers towards monolithic 3D photonic integration. A high transient optical gain ∼5000 cm−1 has been at λ=2100–2200 nm at 300K.
An on-chip switchable mode convertor compatible with WDM operation is proposed and experimentally demonstrated. By selecting input horizontal or vertical linear polarization, the input signal can be converted to either LP11 or LP01 mode over C-band.
Irradiating a semiconductor sample with intense laser pulses in the presence of dopants drastically changes the optical, material and electronic properties of the sample. The properties of these processed semiconductors make them useful for photodetectors and, potentially, intermediate band solar cells. This talk discusses the processes that lead to doping and surface texturing, both of which increase...
We observed the avalanche photodiode operation through defect levels at telecom band in Si photonic crystal slow light modulator. Maximum responsivity was 0.71 A/W with 350 avalanche gain. The eye opened at 20 Gbps.
We propose a method of reduction in optical reflection loss by transparent conductive Indium Gallium Zinc Oxide (IGZO) for the purpose of fabricating mechanical stacked solar cells. Si and Ge substrates coated with 200 nm thick 0.058 Ωcm IGZO layers were stacked with epoxy-type transparent adhesive dispersed with 20 µm sized Indium Thin Oxide (ITO) particles to form a structure of Si/IGZO/adhesive/IGZO/Ge...
We have fabricated and characterized a niobium titanium nitride (NbTiN)-based superconducting nanowire single- photon detector (SSPD or SNSPD) on the silicon (Si) waveguide toward the realization of waveguide-coupled SSPD. The superconducting critical temperature and critical current were 7.85 K and 34.4 μA at 0.3 K, respectively. We investigated the optical response of the fabricated device and found...
The development and assessment of ArF technology in a 200mm FAB line are described. Wafer-level measurement is implemented to explore the dummy pattern effect on cross-wafer uniformity and examine fundamental Si photonics devices.
We realize a technology of single-mode polymer optical waveguide with precise alignment structures suitable for silicon photonic component assembly. The propagation loss is 0.5 dB/cm at 1550 nm.
A Si waveguide optical isolator is integrated with an asymmetrical slit Si waveguide TE-TM mode converter. A maximum isolation of 26.7 dB is demonstrated at a wavelength of 1553 nm for TE mode input light.
A novel 64-channel silicon hybrid demultiplexer is proposed and demonstrated by utilizing a 1×4 ADC-type mode demultiplexer and two 17×17 bi-directional AWGs. With the proposed design, the hybrid demultiplexer becomes very compact and this issue of the channel-wavelength's misalignment is also relaxed greatly in comparison with the previous design. The insertion loss and crosstalk for the fabricated...
Hybrid organic-silicon solar cells are promising candidates for next-generation photovoltaics due to their low fabrication cost and scalable roll-to-roll processes. However, the power conversion efficiency (PCE) cannot compete with those of traditional silicon solar cells yet mostly due to surface reflection and interface recombination losses. In this work, we investigate the sidewall profile and...
In this work, fabricated 1550-nm short-wavelength infrared (SWIR) Ge-on-Si photodetectors coupled with a Si waveguide on silicon-on-insulator (SOI) for on-chip optical interconnect as an energy-efficient green technology for next-generation very-large-scale integration (VLSI) systems are characterized. Here, a particular emphasis is put on the back-end-of-the-line (BEOL) technology in device design...
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