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With recent technique advancement, CMOS silicon-on-insulator (SOI) technology seems to be attractive for the implementation of the RF, Microwave and millimeter-wave circuits and systems due to its excellent feature of lower loss, lower noise and good power handling capabilities as compared to its CMOS counterpart. This paper is going to study the state of the art CMOS SOI processes and the applications...
We review our recent development of germanium on silicon avalanche photodiodes (Ge/Si APDs). Our Ge/Si APDs, manufactured by a standard CMOS commercial foundry, satisfy the requirements of various optical communication systems from 10Gb/s to 25Gb/s.
In this work we study the atomic composition in SiGe:H films as a function of hydrogen dilution. Silane and germane fluxes are kept constant while hydrogen flow is varying to achieve dilutions up to 80 times. Solid content of principle elements as well as contaminants are determined by SIMS. For low dilutions (from 9 to 30), germanium solid content strongly depends on hydrogen dilution since it varies...
Four-level hybrid-clamped (4L-HC) converter is a newly proposed topology which is suitable for high-performance medium-voltage drives. Zero-sequence voltage (ZSV) is commonly used to balance the DC-link capacitor voltages of this topology and then the common-mode voltage (CMV) is also affected. This paper proposes a CMV reduction method for a back-to-back 4L-HC converter. The relationship of CMV and...
In this paper, the performance of universal-filtered multi-carrier (UFMC) system is analyzed. Specifically, the UFMC signals are generated with Dolph-Chebyshev, Hamming and Hanning filtering. The characteristics of UFMC signals are also compared with OFDM signal, in both software and hardware-in-the-loop simulations. Experimental results show that UFMC signals have better performance than OFDM signal,...
We demonstrate a silicon-organic hybrid (SOH) Mach-Zehnder modulator suitable for 100 Gbit/s on-off keying (OOK) with peak-to-peak drive voltages of 1.4 V and energy consumption below 100 fJ/bit. Devices were fabricated using standard processes on a commercial silicon photonic platform.
An embedded microprocessor core designed to have high soft-error immunity is presented. The design achieves hardness via architectural, micro-architectural, and circuit techniques. The basis of the machine is a dual-redundant speculative pipeline that detects mismatches at their commission to architectural state. Added instructions allow software controlled recovery and restart of upset instructions...
In-band full duplex (IBFD) is a promising technique that allows to potentially double the achievable bi-directional throughput over a given bandwidth. Moreover, it has been estimated that IBFD-equipped wireless networks can be more energy-efficient than half duplex ones due to the reduced energy cost of packet collisions. However, one key challenge for implementing an energy-efficient IBFD system...
We demonstrate low-noise mid-infrared frequency comb generation using a silicon microresonator. Using an integrated PIN-diode detector, we show a transition to a low RF-amplitude-noise state consistent with demonstrations of phase-locking in other microresonator platforms.
We investigate the linearity of a silicon Mach-Zehnder modulator with single-drive push-pull configuration. The spurious free dynamic range for second harmonic distortion (SFDRSHD) is 86 dB·Hz1/2 with 4 dB improvement over previous best result.
This paper presents dual stage analog cancellation architectures of a linear and nonlinear self interference signal. The presented architecture has two cancelers which are placed at an RF and baseband stage on an analog domain. The replica signal for the analog baseband canceler is regenerated in a digital domain, and the signal outputs a DAC. The purpose of the presented architecture is to mitigate...
In this paper, we analyze bidirectional communication between two multiple antenna nodes performing half-duplex and full-duplex transmissions. We compare the performance of half-duplex and full-duplex modes in terms of achievable sum rate under finite Signal to Noise Ratio (SNR), while utilizing a realistic, experimentally characterized residual self-interference (SI) model for full-duplex operation...
More and more people are watching video over internet using connected devices such as smartphone, and internet traffic is being burst. In order to deal with these environments, technical development and standardization on RF/PON transmission system have been carried out. For commercialization, RF/PON transmission system is designed to accommodate the connected device as a new means to serve broadcast...
We introduce a microstructure model that consistently correlates the microstructure of nanocrystalline silicon oxide (nc-SiOX:H) to its optical and electrical properties. We successfully validated the model by means of a large quantity of systematically and individually optimized n- and p-doped nc-SiOX:H films deposited at very high frequency (VHF) and radio frequency (RF). In particular, this model...
Emerging market of RFSOI applications has motivated us to come up with the robust compact model for RFSOI MOSFETs. In this work, we have validated the RF capabilities of BSIM-IMG model which is the latest industry standard compact model for independent double gate MOSFETs. Results are validated with the experimental S-parameter data measured. Model shows good agreement for different biases over wide...
This paper addresses digital self-interference cancellation in a full-duplex radio under the distortion of practical RF components. Essential self-interference signal models under different RF imperfections are first presented, and then used to formulate widely linear, nonlinear and augmented nonlinear digital canceler structures. Furthermore, a general parameter estimation procedure based on least...
The lack of high power conversion efficiency in RF passive rectifier circuits at sub-μW power levels with current MOSFET technologies is directly related with the difficulty of the transistors in conducting the required level of current at low voltage values. With a different carrier injection mechanism, the superior electrical characteristics of the Tunnel FET devices at low voltage values (sub-0...
We investigate the effects of p a-Si:H emitter layer defects on n-type silicon heterojunction solar cells (SHJ) by experimental and simulated device analysis. Simulation of interdigitated back contact heterojunction (IBC-SHJ) solar cells shows that reducing the p-layer dangling bond density (Ddb) > 5×1018 cm−3eV−1 is an effective way to simultaneously increase VOC and FF. We use front and rear...
In this work, we investigate a transparent conducting oxide (TCO)-based, passivated contact for the potential use as a passivated tunnel contact to p-type Si. As a surface passivation layer, the Al2O3 films with varying the thickness are deposited using plasma-enhanced atomic layer deposition (PEALD) at 200 °C, followed by post-deposition annealing. For a ∼15 nm thick Al2O3 layer, a high level of...
Silicon avalanche photodiode (APD) was fabricated by standard 0.18 µm CMOS process. The current-voltage characteristic and frequency response was measured for the APD with and without guard ring. With the guard ring around the perimeter of the diode junction, it shows a better performance for the maximum bandwidth but in contrast lower in responsivity. To enhance the bandwidth, the detection area...
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