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SiC Intelligent Power Module (IPM) with high bandwidth integrated current sensors is a future trend to improve the device protection capability and chip utilization. In this work, an integrated current sensing scheme for Silicon Carbide (SiC) MOSFET power module using a Si MOSFET current mirror is proposed, analyzed and tested. The use of Si MOSFET not only lowers the overall cost, but compensates...
Circuit protection devices and power distribution units for future More Electric / All Electric Aircraft (MEA/AEA) power systems require an increased level of control and intelligence along with fast-acting protection mechanisms. The trend towards utilizing solid-state power electronics for system-level protection of MEA/AEA systems has increased due to the many advantages provided over electromechanical...
We explore the intrinsic loss in power switches seen when they undergo charging and discharging of their output capacitance. The intrinsic loss occurs even if switching is carried out at zero current and no on-state current is conducted, and accidental turn-on is avoided. The intrinsic loss cannot be eliminated by using soft-switching schemes and essentially sets an upper limit for the switching speed...
FREEDM-Pair is an innovative power semiconductor switch which reduces the loss and cost through the hybrid integration of a Si IGBT and a SiC MOSFET. During the turn-off of the FREEDM-Pair, the Si IGBT is turned off first under ZVS condition and after a carefully selected delay time, the Si MOSFET is turn-off. In this way, the IGBT's turn-off loss is significantly reduced due to the ZVS turn-off condition...
This paper deals with the design of a DC/DC boost converter aimed at Fuel Cell Vehicle (FCV) application. In order to extend the FC lifespan and to increase the reliability, efficiency and power density, a DC/DC boost converter should be designed with the following features: low current ripple, low weight, low volume, and high redundancy. In this study, a 6-phase Interleaved Boost Converter (IBC)...
We discuss the results of the design and examination of high-voltage superfast opening switches — the drift step recovery diodes (DSRD) based on silicon carbide. The fabricated diodes have p+-p-n+ structure with relatively thick low-doped base region, which allows switching voltage of 1.8 kV in less than 500 ps. With 4H-SiC DSRD operating as an opening switch in an ultrashort pulse generator circuit...
With bias conditions changed during irradiation, the bias dependence of the total dose radiation response of fully depleted (FD) silicon-on-insulator (SOI) n-channel MOS transistors (NMOSFETs) is investigated preliminarily. It is found that the threshold voltage shift of the FD SOI NMOSFETs as a function of total dose exhibits an abrupt inverse change, namely, a unexpected rapid reduction, with increasing...
The scaling behavior of MOSFETs based on two-dimensional (2D) materials is investigated by means of numerical simulation and analytical modeling. Due to their ultimate thinness, 2D channel materials like MoS2 are perfectly suited to push the scaling limits beyond those of silicon. The electrostatic integrity of 2D transistors is governed by the chosen device architecture, substrate material, and gate...
In this study, the n-channel metal oxide semiconductor file effect transistor (MOSFET) with contact-etch-stop-layer (CESL) stressor, SiGe channel, and dummy poly gate is proposed. The simulated technique is utilized to explore the stress distribution of nMOSFET in the channel region induced by foregoing mechanical. The simulation results indicated the SiGe channel significantly affected the stress...
From the varying threshold voltage of MOSFET caused by the external factor, this paper analyzes the variation tendency of amplifier's gain. It makes clear how the gain of three different amplifiers changes in theoretical. After that, EDA tools are utilized to verify the theoretical calculation. The theoretical and simulation result show that threshold voltage(Vth) is a sensitive parameter of amplifier's...
This paper describes a complete process/design co-optimization methodology based on Fully Depleted SOI (FDSOI) technology. A process optimization is detailed through significant effective capacitance reduction, in order to optimize jointly frequency/leakage ratio and high frequency performances. In this objective, an efficient and low cost offset-spacers morphology has been designed to achieve maximum...
This paper presents a failure analysis procedure on a power MOSFET in a three phase inverter. The analyzed power MOSFET has been obtained from a chopper leg in a three phase inverter when an anomalous failure is detected. At first, the X-ray microscope is utilized to inspect the failed device. A hint of the burn-out area in the chip is observed in the cross-section X-ray microscopy image. After that,...
We report on Tunnel Field-Effect Transistors for low power electronics. Thanks to their potential to reach sub-60mV/dec subthreshold slope, these devices are very attractive for use in circuits with sub-0.5V supply voltage. However, proper device design as well as material choice is not obvious and many implementations have shown larger slope than expected, due to parasitic trap-assisted tunneling...
This paper aims at demonstrating, for the first time, the use of back bias to improve the analog performance of current mirrors composed by self-cascode structures with 25 nm-long n- and p-type UTBB SOI MOSFETs. The use of back gate bias has shown to enhance the intrinsic gain of p-type devices by about 7 dB, making it higher than the one from a single device with equivalent channel length whereas...
High efficiency is among the most important targets in power electronic converters. A possible approach to obtain this goal is the usage of better switches. This paper is focused at the study and comparison of SiC and Si power MOSFETS in soft switching resonant DC/DC converter. The latter converter being a part of light battery charger used in ultra-light electric vehicles is realized and investigated...
In this paper, a Two-Switch forward converter using enhancement mode Gallium Nitride transistors (GaN FETs) operating in CCM is designed for low power and high frequency applications. This topology provides a galvanic isolated, simple and efficient approach which will be suitable to use in battery charge circuits. The performance of the converter is evaluated using Si MOSFETs and GaN FETs. Comparison...
The paper presents loss analysis and improvements of a battery charging system for light electrical vehicles. Possible solutions and design approaches are presented for reducing weight and improving efficiency of the system. The charger system (1500W) consists of rectifier with inrush current limiting, PFC and resonant DC/DC converter. Presented loss analyses leads to selection of proper switches...
While silicon carbide (SiC) is now believed to be a potential replacement to leading horse material silicon (Si) on many power fronts, this paper addresses the merit of SiC material for a diverse range of power applications. Several commercial SiC power modules have been characterized and evaluated under various test conditions and hence strengthening the confidence level of their usage in the field...
This paper presents the results of a system study comparing a SiC MOSFET and a Si IGBT power module on a DC/DC power conversion system level. The target of this study is the evaluation of a reduced cooling effort as well as the reduction of inductor sizes by the use of high efficient SiC switches. Therefore a conversion performance target have been defined which have to be fulfilled by the SiC and...
Current-limiting strategies for solid-state circuit breaker (SSCB) without adding impedance is introduced in this paper. With the current limitation of novel phase-shifting method, the advantages are simple hardware structure, relatively low cost, no heat generation, low weight and small size. Current-limiting capability is exploited with qualities of good control accuracy and robustness. The principle...
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