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SiC VDMOSFETs show great promise in high power/temperature operations when compared with their Si counterparts. The SiC MOSFETs have been compared with Si Double Diffused MOSFETs having the same physical dimensions. Si Double Diffused MOSFETs are designed and optimized through process and device simulations. The performance advantages like those in blocking voltage and on-resistance of the SiC MOSFET...
Organic electronics, such as OLEDs, OPVs, and polymer based power storage units (batteries and capacitors) are rapidly becoming low-cost viable alternatives to silicon-based devices. These organic devices however, are still reliant on the support functions of standard silicon components such as power and logic transistors. Integration of these organic devices with standard silicon electronics into...
We characterize the microwave loss in coplanar waveguides (CPWs) on AlGaN/GaN HEMT buffer layers on high-resistivity silicon (HR-Si) substrates, up to 110 GHz. To our knowledge, this is the first broadband characterization of CPWs on GaN-on-Si. Conventional CPWs on commercially available AlGaN/GaN on HR-Si HEMT layers show a loss as low as 0.8 dB/mm at 110 GHz. Losses are further reduced by etching...
By utilizing Si nanowires, ultracompact photonic integrated circuits are realized. Some Si hybrid plasmonic waveguides are also introduced for subwavelength optical confinement and low loss propagation. We review our recent work on Si nanophotonic integrated circuits and their applications.
An integrated waveguide realized on (high resistivity) silicon using an IC-compatible process is reported in this work. The manufacturing process flow is based on substrate transfer technique and KOH etching, giving the resulting waveguide a trapezoidal cross-section. For this structure, the analysis of the propagating modes described here shows that it is possible to define a TE10-like mode, whose...
BOOM is a photonic integration concept that aims to develop compact, cost-effective and power efficient silicon photonic components for high capacity routing functionalities. To accomplish this, flip-chip bonding and heterogeneous wafer scale fabrication techniques are employed that enable Si manufacturing with III-IV material processing. We present in this paper the second generation of BOOM devices...
This work presents temperature compensated single-device fully micromechanical (circuit-less) oscillators. Thermal-piezoresistive interactions in certain micromechanical resonant structures can lead to self-sustained mechanical vibrations. Self-sustained single crystalline silicon oscillators with frequencies in the few MHz range have been fabricated and their temperature drift behavior is characterized...
In this paper, we present novel optically tunable 3D metamaterials operating at terahertz (THz) frequencies which exhibit a tuning range of approximate 50% of the resonance frequencies. The 3D array structures, consisting of double splits ring resonators (DSRRs) with silicon pads on sapphire, were fabricated using multilayer electroplating technology (MET). As a function of incident laser power, a...
This study presents a novel fully-differential capacitive sensing accelerometer design consisting of glass proof-mass and Si-vias. The accelerometer with glass proof-mass has three merits, (1) the insulation glass proof-mass and conducting Si vias enable the gap-closing fully-differential electrodes design, (2) the electrical routings on insulation glass proof-mass can reduce parasitic capacitance,...
We have developed a silane-free atmospheric-pressure plasma Si deposition process and investigated the properties of the deposited films by fabricating strain gauge type pressure sensors for the first time. The Si deposition process, which is known as plasma-enhanced chemical transport, utilizes the temperature difference between the solid Si source and the substrate in atmospheric hydrogen plasma...
This paper presents the first near-contact aerodynamic damping model based on rarefied flow modeling for use in dynamic simulations of large-displacement motion and contacting behavior of microbeams. The damping model is constructed based on high-fidelity simulations of rarefied gas flow around microbeams based on the Boltzmann kinetic equation with the Ellipsoidal Statistical Bhatnagar-Gross-Krook...
This paper introduces the Aluminum Nitride - High Aspect-Ratio Polysilicon and Single-crystal Silicon (AlN - HARPSS) process technology that for the first time enables combined capacitive (via air-gaps) and piezoelectric (via Mo/AlN/Mo piezo-stack) transduction in silicon micromechanical resonators. Lateral air-gaps as small as 150 nm have been realized for a 20 μm thick microresonator (air-gap aspect-ratio...
This paper reports on the experimental verification of the intrinsic loss mechanisms present in degenerately doped single-crystal silicon. Previous work reported at the Hilton Head Workshop 2010 experimentally showed the dominant acoustic loss mechanism in a 3.72-GHz silicon resonator (Fig. 1) to be Landau-Rumer phonon-phonon dissipation as seen from the 1/T4 temperature dependence for temperatures...
This paper introduces a novel design of high current field emitters based on unique pin structures with a ball shaped tip. Our ball-tip pins provide relatively large surface area at the tip and increase the field enhancement factor regardless of dimension of the pin base. The ball-tip pins turn out to produce higher field emission current than that from the generic sharp-tip pins due to the significantly...
This paper describes an integrated bio-reaction platform composed of silicon nanotweezers and open microfluidics for real time biomechanical assays. The silicon nanotweezers can sense slight biological modification of the trapped sample due to stable frequency response with high Q factor in liquid. The microfluidic device integrates active valves for controlling the biological medium. Biomolecular...
In this paper, we propose a device model of silicon nano-scale wire transistor which includes the effects of elastic and inelastic scattering processes in carrier transport. Additionally, a possibility of silicon electrode for the wire transistor will be discussed.
In this report we describe fabrication and (photo-)electrical measurements of thin-film structures consisting of sequentially deposited nanocrystalline silicon (nc-Si) and phthalocyanine semiconductor layers.
SRAMs based on tunneling field effect transistors (TFETs) consume very low static power, but the unidirectional conduction inherent to TFETs calls for special care when designing the SRAM cell. In this work, we make the following contributions, (i) We perform the first study of 6T TFET SRAMs based on both n-type and p-type access transistors and determine that only inward p-type TFETs are suitable...
This paper proposes an equivalent lumped element model for various multi-TSV arrangements and introduces closed form expressions for the capacitive, resistive, and inductive coupling between those arrangements. The closed form expressions are in terms of physical dimensions and material properties and are driven based on the dimensional analysis method. The model's compactness and compatibility with...
In this paper we will present our latest research results of the integrated RECTENNA (the rectifying antenna) with a THz quantum dot Schottky Diode and an integrated silicon antenna for RF applications. Within this work a specific antenna design, an integrated single patch antenna, will be shown. A layer of Ge quantum dot (QD) was embedded in an integrated Si Schottky barrier diode. The high frequency...
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