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This paper compared the fatigue damage accumulation of the gold-tin eutectic die attach layer in different high electron mobility transistor (HEMT) packages with various types of die attach layers and substrates under thermal cyclic loading. The fatigue damage per cycle used in this study was characterized by the accumulation of plastic work, which was derived by the finite element analysis (FEA)...
One of future device candidates for the Si platform integration, the Ge pFinFET, is evaluated for two different shallow-trench-isolation (STI) processes at low temperature operation. The effective mobility around 700 cm2/Vs at 77 K is reported for both STI processes, as a result of the compressive strain in the channel. Regarding the OFF-state region, it is found that the substrate current plays an...
Paper considers the procedure of derivation the main piezoresistance cooefficients of the thin monocrystalline Si film formed on the oxidized surface of monocrystalline silicon substrate. The specific features related to the different crystallographic orientations of the film and the substrate are taken into account.
We present a systematic study of the impact of strain on off-state leakage current, using experimental data and ab-initio calculations. We developed new models to account for the impact of strain on band-to-band tunneling and trap-assisted tunneling in silicon. We observe that the strain can dramatically increase the leakage current, depending on the type of tunneling involved. We predict that 1%...
This paper investigates contact-less sensing concepts for measuring the three-dimensional deformation of (silicon) thin wafers. The deformation shape under different load conditions is a vital measurand, as it directly correlates to internal mechanical stresses in the wafer and is of importance for in-line process control of manufacturing processes involving thin wafer handling. Both time-domain THz...
We have developed a strain gauge sensor to measure two axial dynamic strain and temperature evolution during ultrasonic flip-chip bonding. The sensor detects strain from change in resistance due to the piezoresistance effect of Si and temperature from change in current-voltage characteristics of pn-junction. The spatial resolution of the sensor is 20 µm. Au planar microbumps were used for the measurement...
Based on a simple process referred to as ultimate-thinning-and-transfer-bonding (UTTB), this paper shows that the high-frequency performance of advanced CMOS technologies can be combined with mechanical flexibility and transparency. The invariance upon thinning, transfer and flexure of both DC and RF CMOS electrical characteristics is demonstrated. Specific to high power RF applications, the complete...
Dynamic change in distribution of strain generated in Si under a pad electrode was measured during ultrasonic ball bonding by using newly developed Si strain sensor. The sensor was designed to be able to determine strains in the directions normal and parallel to the surface. Bonding of Cu and Au was measured. It was clearly observed that the position of the largest compressive strain moved from the...
We report on the layout effects in strained SiGe channel FDSOI pMOSFETS down to 20nm gate length. Two SiGe integration schemes are compared: the SiGe-first approach, with Ge-enrichment performed prior to the STI module and the SiGe-last approach using only a SiGe epitaxy after the STI module. We evidence reduced layout effects in the SiGe-last integration featuring Si/SiGe bilayer. SiGe-last shows...
In this work we propose a methodology to analyze the elastic energy interaction at the atomic level between Si self-interstitials and extended defects in crystalline Si. The representation of this energy in maps in 2D planes shows the anisotropic nature of the elastic interaction. This elastic energy maps can be used to understand diffusion trajectories of Si self-interstitials around extended defects...
In this work we investigate the correlation between channel strain and device performance in various n-type Si-NWTs. We establish a correlation between strain, gate length and cross-section dimension of the transistors. For the purpose of this paper we simulate Si NWTs with a <110> channel orientation, four different ellipsoidal channel cross-sections and five gate lengths: 4nm, 6nm, 8nm, 10nm...
As the weakest parts in through silicon via (TSV) structures, solder bump joints bear cyclic thermal stresses under power cycling in service, which contribute to the fatigue of them. Meanwhile, the dimensions of solder bump joints keep shrinking due to the miniaturization of electronic systems and products. The size effect can have significant influence on thermal fatigue behavior of the joints. In...
Mid-infrared intersubband absorption from p-Ge quantum wells with Sio.sGeo.s barriers grown on a Si substrate is demonstrated from 6 to 9 μm wavelength at room temperature and can be tuned by adjusting the quantum well thickness.
Using the Smart CutTM technology, we fabricated 200 mm optical Germanium-On-Insulator (GeOI) substrates for photonic applications. The high crystalline quality of the Ge layer opens the way to wafer-scale fabrication of photonic components such as new light emitting devices based on highly-tensile strain.
As a natural result of the continual growth and progress in soft robotics to establish fully compliant bodies primarily made of soft materials using additive manufacturing techniques, there are also increasing efforts towards realizing flexible and stretchable sensors which can seamlessly be embedded in soft robotic devices. In this study, we report on the performance evaluation of two soft strain...
The electronic band structure, and in particular the band gap directness, of binary and ternary SiGeSn alloys are first reviewed, and different aspects of their optoelectronic and microelectronic applications discussed, and the computational analysis is then extended to the dilute carbon-containing alloys.
Ge is an indirect band gap material. The band structure of Ge is a strong function of strain and alloy composition, and a transition from an indirect to a direct band gap has been observed for y∼6–10% for relaxed Ge1_ySny indicating the possibility of widespread applications of Ge-based photonic devices. The pseudomorphic nature of the Ge-based alloy layer on a substrate is important to keep dislocation...
In this work, the electrical transport in Al/A2O3/Pt and Al/A2O3/Al junctions under mechanical stress was investigated. The junctions were fabricated by evaporation for the metals (with shadow mask lithography) and Atomic Layer Deposition (ALD) for the A2O3. First, IV characteristics were extracted from the unstressed sample and these curves were fitted with the Fowler-Nordheim current expression...
In this paper we investigate the density of states of hexagonal silicon nanotubes. Next, we continue with the investigation of the effects two types of mechanical deformations, namely uniaxial and torsional strains on the DOS of Single Walled Silicon Nanotubes (SWSiNTs). We use tight binding model to perform DOS calculations and work out the appropriate results. It is shown that the application uniaxial...
In this work, investigations on stress development in electrically conductive adhesives used as a die-attachment technology for electronic devices are presented. Three electrically conductive adhesives and two measurement techniques were used for investigations. A silicon stress chip with NiCr-thin film metallic strain-gauge structures developed in our group is used for determination of stress development...
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