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We theoretically investigate the nonlinear loss impacted nonlinear effects in a silicon waveguide, targeting a highest four-wave-mixing efficiency. A simple and accurate formula for optimal length calculation is derived, providing a promising criterion to accurately design the nonlinear waveguide.
Hybrid halide perovskite has made great advances for making new composition of materials, which have wide usage in advanced optoelectronic devices. Here we show amplified spontaneous emission (ASE) in a perovskite nanograting metasurface, defined by the cost effective nanoimprint lithography method which cannot typically be applied to hard, ionic based materials such as perovskite.
We demonstrate a four-port optical switch for the photonic network-on-chip architecture, which contains four silicon Mach-Zehnder optical switch elements tuned by the plasma dispersion effect. The optical signal-to-noise ratio of the device is over 10.0 dB in the wavelength range from 1525 nm to 1565 nm. Its 10%–90% rise time and fall time are 2 ns.
We propose in this work an original nanobeam cavity geometry for the hybrid integration of active materials in silicon photonics. The key point of this structure is to use Bragg mirrors exploiting a dielectric dispersion band, to form a field-confining cavity core relying on an air dispersion band. The resulting situation opens the way for a gentle confinement of the electromagnetic field in the low-index...
Photonic-electronic integration is a key technology to master data traffic growth and therefore an enabler of future network technologies. For some time now, a novel silicon-based photonic-electronic integration technology, photonic BiCMOS, is under development at IHP. Photonic BiCMOS is a planar technology co-integrating monolithically on a single substrate high-speed RF frontend electronics - by...
An integrated photon pair source in the 1550-nm wavelength region is demonstrated. Spontaneous four-wave mixing is facilitated through a silicon-on-insulator micro-ring filter with 125-GHz spaced resonances. Coincidences in the pair emission are observed with a 95% visibility at spectral channels equidistant to the pump wavelength.
This talk will review recent work developing a scalable photonic switching platform that enables reconfiguration at the nanosecond scale, addressing innovations in device design, packaging, and architecture that can overcome scaling limitations imposed by the physical layer.
Silicon photonic carrier-injection switches can enable Petabits/s packet switch cores. These switches are compatible with 100GigE and future 400GigE link budgets, using a crosstalk suppression topology, aggressive loss reduction including 0.001dB crossings, polarization control and rapid auto-calibration, and by removing self-heating transients to prevent dynamic crosstalk.
We present recent progress achieved with III-nitride photonic circuits epitaxially grown on silicon(111). The photonic circuits embed two-dimensional photonic crystals and microdisk resonators coupled to suspended waveguides. We discuss the linear and nonlinear response of the resonators through second and third harmonic generation.
A compact subwavelength grating (SWG) based polarization rotator (PR) for silicon-based cross-slot waveguides is proposed and analyzed. By replacing the diagonal regular Si wires with the SWGs, the rotation region is constructed. Numerical results show that a PR of 12.6 μm in length at the wavelength of 1.55 μm is achieved and the polarization conversion efficiency and insertion loss are, respectively,...
A compact low-cost multicolor germanium (Ge) infrared photodetector is designed by utilizing the guided-mode resonance condition of a one-dimensional grating with adiabatically tuned (or so-called chirped) in-plane periodicity. It is shown numerically that the resonance phenomenon is accompanied by a spectral splitting, as every wavevector component is matched with different instantaneous local in-plane...
We demonstrate a fully integrated photonic network-on-chip (NoC) circuit comprising of more than 400 components realized in heterogeneous silicon photonic process offering 2.56 Tbps transmission capacity.
We present a variational study of direct transitions in GeSn/Ge quantum well system for photonic applications. The exciton radiuses, binding energies, and oscillator strengths are calculated for various Sn contents are calculated and discussed.
GeSn-based optically pumped lasers and photoconductors have been systematically investigated. The operation wavelength of these devices covers 2–3 μm. Since GeSn technique is fully compatible with current CMOS process, the GeSn-based devices can be widely used in the area of Si integrated photonics.
Commercial CAD tools for carrier transport simulation in optoelectronic devices are commonly based on the drift-diffusion (DD) model. In the design of silicon photonics optical interconnects, the DD approach can be acceptable for p-i-n photodetectors, but may be inadequate for avalanche photodiodes (APDs). Here we discuss the DD limitations in the case of waveguide Ge-on-Si SACM APDs, and we investigate...
A TCAD based analysis is presented on the transmission efficiency η of silicon-on-insulator (SOI) and silicon nitride slab waveguides in a high-voltage standard SOI-CMOS technology, for the spectral range of 480 nm–1300 nm, and isotropic optical excitation via monolithic Si-based LEDs. The effects of geometry, wavelength and galvanic isolation on η are reported.
The decades long development in shrinking footprint and improving performance of photonics integrated circuits has seemingly slowed down in recent years, posing problems in e g interconnects in data centers with their ever increasing power requirements. Thus, routes to a continued development towards smaller footprint, lower power, higher performance integrated nanophotonics will be presented and...
More than ten years ago it was demonstrated that the Pockels effect could be feasible by breaking the crystal symmetry of silicon. Since then, strained silicon devices have been developed by means of a highly stressing cladding layer (typically silicon nitride, SiN) deposited on top of the silicon waveguide. However, it has been recently shown that carrier effects could play a significant role and...
A dual-nanowire heterostructure with a GeSn layer laterally laying on Ge nanowires is demonstrated by MBE. The strain field analyzed by FEM shows that the novel proposal can significantly release the compressive strain in GeSn for potential direct bandgap conversion as a Si-based light source.
The mid-infrared region is prominent for gas sensing due to the unique footprint of various volatile organic compounds. We investigated the intrinsic damping in silicon slab waveguides in the mid-infrared region in order to provide a platform for evanescent-Qeld sensing using silicon waveguides.
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