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Three Ge-on-Si photodetector architectures with different contacting schemes are compared, with emphasis on their bandwidth. The study shows that bandwidth > 50 GHz and responsivity > 1 A/W at 1490 nm can be achieved using a commercial silicon photonics process.
We report on the integration by transfer printing of III-V Fabry-Perot cavities on a silicon photonic circuit. We pre-process the III-V coupons on their native substrate, transfer print onto the target SOI, and post-process the printed coupons. We report light coupling into the photonic circuit.
We experimentally demonstrate a novel method to make a tunable Fano resonance. Based on a silicon microring with two tunable reflectors inside, we are able to generate a tunable Fano resonance with maximum extinction ratio over 40 dB and a slope rate over 700dB/nm.
We present a comprehensive study of deposited silicon microring resonators for photonic-integrated circuitry. Refractive index, thickness, and widths variations are estimated. The statistical deviations are sufficiently low to realize photonic circuits of high quality for instance deposited on various substrates and integrated with heterogeneous materials.
In this work we present the design, fabrication and characterization of a silicon photonics Mach-Zehnder modulator (MZM) with resonant electrode. The device shows an enhanced modulation response in the 20GHz frequency range compared to a standard traveling-wave MZM.
We demonstrate low-loss mid infrared photonic integrated components fabricated on a Ge-rich Si1−xGex platform. These devices show broadband operation over a wavelength range of at least from λ ≈ 5.1 μm to λ ≈ 8.6 μm, and comprise waveguides, multimode interference couplers and Mach-Zehnder interferometers.
We report on the integration of carbon nanotubes in silicon micro-cavities to develop cost-effective light sources. Strong light coupling from carbon nanotubes was demonstrated into silicon photonics resonators, nanobeam cavities and photonic crystals.
We present an interlayer slope waveguide, designed to guide light from one level to another level in a multilayer silicon photonics platform. The waveguide is fabricated using HWCVD a-Si:H at 350oC. Measured loss of 0.5 dB/slope was obtained at a wavelength of 1550 nm and for TE mode polarization.
Compressively strained GeSn alloys grown on Ge buffers on Si (001) substrates were fabricated into microdisks and strained using silicon nitride stressors. The strained disks are measured to be tensile by Raman spectroscopy, and demonstrate direct bandgap emission in the 3–5 μm gas sensing window.
We propose a high-speed electro-absorption modulator based on a direct bandgap Ge0.875Sn0.125 alloy operating at mid-infrared wavelengths. Enhancement of the Franz-Keldysh-effect by confinement of the applied electric field to GeSn in a reverse-biased junction results in 3.2dB insertion losses, a 35GHz bandwidth and a 6dB extinction ratio for a 2Vpp drive signal.
We report on miniaturized spectroscopic sensors that are realized using Silicon Photonics technology. This technology relies on CMOS compatible processes to fabricate both Silicon and Silicon-Nitride based photonics integrated circuits. Various spectroscopic sensor designs and applications are discussed.
We report on experimental results of silicon micro-ring resonators based on non-resonant photonic metamaterial waveguides. High extinction ratio up to 30 dB and loaded Q-factors in a range of 1500 to 6000 were achieved at a wavelength of 1550nm.
The GaAsP/Si dual-junction solar cells have been systematically investigated in our paper by using AMPS (Analysis of Microelectronic and Photonic Structures). Based on the optimized results of single-junction solar cells, we propose a promising method to improve the properties of the dual-junction solar cell. And the monolithic GaAsxP1−x/Si dual-junction solar cells with various As compositions (x=0...
The advancement and use of silicon photo multiplier (SiPM) technology has enabled portable devices for applications such as scintillation detection to be developed. The proposed analogue to digital converter (ADC) architecture and field programmable gate array (FPGA) system configuration advances on analogue signal processing methods, traditionally employed for gamma isotope identification applications...
We show the design of a DAC-less PAM-4 optical modulator operating at 1550 nm wavelength based on integrated silicon waveguides embedded with graphene in capacitor-like structures on the top and below the waveguide's core. By balancing the optical modal distribution interacting with the graphene through the waveguide design, it is possible to perform direct modulation of PAM-4 signals aiming the next...
This conference talk will sum up our recent contributions related to the integration of semiconductor carbon nanotubes (s-SWNTs) as an active material in silicon photonics. This work is motivated by the possible use of s-SWNTs for light emission, detection, and modulation relying on the same hybrid on-silicon integration platform. We will first describe experimental results carried out to prepare...
Optical modulation in the O-Band using a Mach-Zehnder modulator in push-pull configuration is presented and experimentally demonstrated. Open eye diagrams at 25 GBps have been obtained with more than 8 dB extinction ratio with an active length of only 1 mm.
We exploit a SiN/Si double-layer platform for an ultra-low crosstalk multi-port optical switch that exhibits −50 dB crosstalk in a bandwidth wider than the C-band. The platform possesses full compatibility with a silicon photonics platform.
Mid-Infrared (mid-IR) photonic using barium titanate (BaTiO3) thin films are demonstrated through the complementary metal-oxide-semiconductor (CMOS) process. The BaTiO3 thin films have broad infrared transmittance between λ = 2.5 μm to λ = 7 um. Our waveguides show a fundamental mode over broad mid-IR regime. With the broad mid-IR transparency and electro-optic (E-O) property, our BaTiO3 platform...
In this paper, we propose the mirror-symmetric Fano-like resonances which are generated by the interference between two resonant beam from through and drop ports of an add-drop microring resonator. While the path lengths of the two beams are different, small quasi-periodic spectral responses are nested in large periodic ones. The line shapes of the resonances are mirror images about the center wavelength...
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