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In recent years, the advent of Metal Oxide Semiconductor Field Effect Transistor (MOSFETs) rank as one of the most significant development in power electronics. Its ability to work at high-voltage and high-frequency make MOSFETs become the most important electronic device for many power system circuit. For harsh environment application in example the satellite system, requires the MOSFETs dealing...
Germanium-on-silicon waveguides are designed, fabricated and characterized with a novel near-field infrared spectroscopy technique that allows on-chip investigation of the in-coupling efficiency. On-chip propagation along bends and straight sections up to 0.8 mm is demonstrated around λ = 6 μm.
We exploit the resonant enhancement of light in photonic crystal slabs to enhance selected optical properties. Enhancement of absorption and local field gradients result in applications to microscale heating and optical trapping, respectively.
We present a comprehensive photonic approach for passive cooling of solar cells by simultaneously performing radiative cooling while also selectively utilizing the sunlight. We design a photonic cooler made of multilayer dielectric stack that can strongly radiate heat through its thermal radiation while also significantly reflecting the solar spectrum in sub-band gap and ultraviolet regime. We show...
We present the design of an analog Silicon Photonic MEMS phase shifter based on vertically moving adiabatic couplers. Using a two-step electrostatic actuation method, the phase shifter can be turned on selectively by applying an actuation voltage on a first pair of electrodes, and the phase of the optical signal can be tuned continuously by applying an actuation voltage at a second electrode pair...
Terahertz light-matter interactions within a semiconductor-filled waveguide can be tuned in space and time via photoexcited regions created on ultrafast time scales and sub-THz wavelength length scales by a patterned optical pulse. These light-induced metal-dielectric structures can be used to dynamically modify the photonic band structure of THz light within the waveguide, controlling the amplitude,...
Quantum photonic technologies have the potential to revolutionise our information and communication systems, enabling ultra-secure communication and advanced computation with applications in quantum simulation and machine learning. Here we overview the potential of silicon photonics to realise such a technology platform.
Plasmonics is increasingly touted as a solution to replace traditional photonics. And indeed, a new generation of passive and active plasmonic elements is emerging. Unlike photonic devices these plasmonic elements feature a tiny footprint in combination with an almost unlimited bandwidth. Yet, plasmonic devices also suffer from high losses. The question then is where and when plasmonics really can...
We show that graphene can be provide electro-optic properties to traditionally passive optical materials and enable efficient integrated active nanophotonic devices. We show devices with GHz absorption modulation based on ring resonators. We also report the first experimental demonstration of a graphene electro-refractive modulator with VπL of 0.14 V cm, and minimal absorption modulation based on...
Hybrid integration of GaN and Si photonic devices is promising. Using a polymer bonding technique, GaN microring resonators are fabricated on Si substrate. Transmission characteristics of the GaN microring is measured.
We take this opportunity to introduce our research and development effort on MEMS-based dynamic x-ray optics that exploit the properties to manipulate and control the x-ray pulses at synchrotron sources for time-resolved experiments.
A hybrid III-V/SOI directly modulated DFB laser operating at 1.5 μο is fabricated, showing a side mode suppression ratio above 50 dB and a 3-dB bandwidth of 12 GHz. Error-free transmission (BER<10−9) at 10 Gb/s over 66-km SSMF is demonstrated without dispersion compensation and FEC.
Reduction of the polarization dependent loss (PDL) of 1.3 μm two dimensional grating coupler (2D-GC) was demonstrated by using slanted arrays and cross shaped scatterers. The PDL of 2D-GC was measured to be < 0.5 dB over a 40 nm range at 1.3 μm.
We report on the first third order nonlinear experimental characterization of Ge-rich Si1.xGex waveguides, with Germanium concentrations x ranging from 0.7 to 0.9. The experimental values will be compared with theoretical models. These results will provide helpful insights to assist the design of nonlinear integrated optical based devices in both the near- and mid-IR wavelength ranges.
Silicon Photonics is seen as a potentially disruptive approach to design and build very high speed transceivers for datacom applications with lower cost than traditional discrete or III-V monolithic approaches. Due to the high refractive index of silicon, very low loss optical waveguides with small radius of curvature can be fabricated in silicon, allowing easy integration of wavelength multiplexers,...
We present optically pumped lasing from group IV GeSn/SiGeSn heterostructures. A comparison between double heterostructure and multi-quantum-well microdisk cavities reveals advantages of the multi-well design. Strongly reduced lasing thresholds compared to values from bulk devices are observed.
We demonstrate experimentally a fundamentally new low-loss silicon nanophotonic in-plane crossing. The crossing operation uses a three-mode synthesis of a 1-D Gaussian beam. The measured loss is 0.007 dB ± 0.004 dB, which is the lowest reported loss for silicon waveguide crossings.
We present high-performance Bragg filters based on Si sub-wavelength engineering. We demonstrated a novel differential configuration approach that relaxes fabrication constraints. Single-etch filters with corrugation widths of 150 nm allowed measured wavelength rejection exceeding 40 dB with narrow bandwidths as low as 1.1 nm.
Silicon waveguide crossings using multi-mode interferometers are highly sensitive to geometry at the internal corners. Optical proximity correction was developed using design-of-experiments without sophisticated foundry modeling. This simple technique improved loss by a factor of 2, to <30 mdB, while maintaining flatness over C-band.
Spectral variation behavior for many grating couplers is experimentally investigated. It was found that the coupling wavelength is shifted by fabrication deviations in grating structure, and grating depth variation in 300-mm wafer processes is precisely derived by numerical analysis for coupling wavelength variation.
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