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We present an infrared photodetector obtained by depositing Ge on patterned silicon substrates. The patterning prevents thermal cracks formation allowing for the deposition of several micrometer thick Ge layers, exhibiting strong absorption at the indirect gap (λ=1.88 μm).
The Si quantum dot doped SiOx waveguide based free-carrier absorption modulator with enhanced modulation depth from 52.5% to 63.5% is demonstrated by adding a ring resonator and inducing the electron-hole plasma to cause a resonance shift in the ring.
A mid-infrared (mid-IR) label-free chemical sensor was developed using opto-nanofluidics consisting of a Si-liquid-Si slot-structure. A broadband mid-IR lightwave can be strongly confined within a nanofluidic capillary by utilizing the large refractive index contrast (Δn ∼ 2) between the liquid core waveguide and the Si cladding. Through an optical-field enhancement together with a direct interaction...
Nanowires are filamentary crystals with a tailored diameter in the submicron range. This particular morphology has improved existing and inspired many novel applications such as biosensors 1, high mobility transistors, lasers 2,3 and solar cells 4. The one dimensional nature of nanowires is especially relevant for solar cells. First, by fabricating radial pn junctions in otherwise standing nanowires...
Heterojunction crystalline silicon solar cells using a hydrogenated nanocrystalline cubic silicon carbide emitter has been developed. The use of the widegap emitter significantly reduced the optical absorption loss in the emitter region. The solar cells also showed high open circuit voltage of above 0.718 V. This high open circuit voltage indicates that the recombination velocity at the interface...
Liquid-phase crystallised Si on-glass has emerged as a new PV material potentially capable of solar cell efficiencies comparable to that of mc-Si wafer cells. An interface between Si and glass is found to play a crucial role in realizing the efficiency potential. Transparent dielectrics, such as SiOx, SiCx, SiNx, are used as interface buffers to serve a few functions: Si wetting and adhesion; high...
The first demonstration of Germanium-Tin on Silicon (Ge1−χSnχ/Si) avalanche photodiode (APD) for short-wave infrared (SWIR) imaging is reported. The temperature dependence of breakdown voltage was characterized. An extracted thermal coefficient of 0.05% K−1 indicates that the Ge1−χSnχ/Si APD achieved a lower thermal sensitivity than conventional III–V-based APDs. At the wavelength λ of 1600 to 1630...
Gold and silver nanoparticles exhibit localized surface plasmon resonance in the visual and infra-red part of the electromagnetic spectrum. Current research is aimed at exploiting this phenomenon in biosensors and energy harvesting. This paper reviews current work being undertaken in this area with particular focus on the use of electromagnetic modeling tools to optimize the physical processes.
We demonstrate significant enhancement of light absorption by adding plasmonic double-shell nano-antennas on the top of thin film silicon solar cells. This enhancement results from resonant light scattering of core shell nano-antennas. Finite element method simulation shows using three layered core shell nano-antennas on the top of thin film solar cell causes average absorbance enhancement of 51.2%...
A drastic Q factor variation from 7900 to 1200 is observed in a silicon ring resonator loaded by micrometer-scale graphene with various lengths. The significant decay of the Q factor agrees with a numerical analysis.
A new type of “black silicon” materials with high optical absorptance and annealing-insensitivity is designed and fabricated by femtosecond laser pulses. These results have important implications for the fabrication of highly efficient optoelectronic devices.
We report the wavelength dependency of third-order nonlinearity and multi-photon absorption of silicon in the spectral range from 1.6 µm to 6 µm, including the nonlinear figure of merit [1].
We demonstrate THz-induced transparency in two types of single-layer CVD graphene samples utilizing high-field THz pulses. The nonlinear THz transmission depends on the local conductivity of the samples and dynamically varies in the time domain.
We present the first experimental demonstration of Zn+ implanted Si waveguide photodiodes for 2.2–2.4 µm operation. Preliminary responsivities > 65 mA/W are measured, suggesting suitability for on-chip sensing and communications applications in the mid-infrared.
An on-chip technique for all-optical ultrafast control of silicon photonic elements was demonstrated by controlling transmission of SOI multimode interference-devices. Localized absorption by free carriers generated by ultraviolet pump pulses was used for achieving control.
A high speed Si modulator with fringe field junctions is presented. Low carrier absorption (1.3 dB/mm) and VπL (1.8 V-cm) are demonstrated. The measured modulation speed and depth are 11.8-GHz and 8-dB.
We experimentally demonstrate that, by varying their diameter, the visible-to-infrared reflectance spectra of arrays of vertical Ge nanowires can be tuned. The results could enable future nanowire-based photodetectors with tailored responsivity spectra.
We measure the transmission of terahertz pulses through an intrinsic silicon waveguide, and observe a decrease in absorption at higher terahertz fields. The effect is enhanced when photocarriers are introduced by top-illuminating the waveguide.
We provide an analytic solution for the phase sensitive amplification in silicon photonic crystal waveguides including two-photon absorption (TPA). We compare the analytical solution with experimental results and show both the TPA and free carriers limit the signal gain.
We introduce a general approach to radiatively lower the temperature of a structure, while preserving its color under sunlight. The cooling persists in the presence of considerable non-radiative heat exchange, and for different solar absorptances.
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