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The paper presents loss analysis and improvements of a battery charging system for light electrical vehicles. Possible solutions and design approaches are presented for reducing weight and improving efficiency of the system. The charger system (1500W) consists of rectifier with inrush current limiting, PFC and resonant DC/DC converter. Presented loss analyses leads to selection of proper switches...
While silicon carbide (SiC) is now believed to be a potential replacement to leading horse material silicon (Si) on many power fronts, this paper addresses the merit of SiC material for a diverse range of power applications. Several commercial SiC power modules have been characterized and evaluated under various test conditions and hence strengthening the confidence level of their usage in the field...
This paper presents the results of a system study comparing a SiC MOSFET and a Si IGBT power module on a DC/DC power conversion system level. The target of this study is the evaluation of a reduced cooling effort as well as the reduction of inductor sizes by the use of high efficient SiC switches. Therefore a conversion performance target have been defined which have to be fulfilled by the SiC and...
The paper focuses on a selection process of boost diodes for Active Power Factor Correctors (APFC) based on the Boost converter. The choice of the suitable boost diode plays crucial role for an efficiency of APFC. The main aim of the paper is devoted to theoretical and experimental comparison of the diodes. We have compared two ultra fast silicon diodes optimized for a Continuous Conduction Mode (CCM),...
Current-limiting strategies for solid-state circuit breaker (SSCB) without adding impedance is introduced in this paper. With the current limitation of novel phase-shifting method, the advantages are simple hardware structure, relatively low cost, no heat generation, low weight and small size. Current-limiting capability is exploited with qualities of good control accuracy and robustness. The principle...
This paper investigates the behavior of selected Si-PiN and SiC (BD-MOS & SBD) FWD in multichip power modules during current surge event conditions. Surges can occur in high power converters used for motor drives and grid connected systems. A novel testbench and testing procedure is introduced which allows fairly rapid type-test characterization of modules without the need to perform manual-intensive...
We investigate the anisotropic behavior of dry and wet thermal oxidation of silicon carbide for which a high-accuracy three-dimensional simulation model is entirely missing. To bridge this gap, we propose a direction dependent interpolation method for computing oxidation growth rates for three-dimensional problems. We use our method together with available one-dimensional oxidation models to simulate...
An evaluation is performed for three-phase solar Photo-Voltaic (PV) inverters using either Silicon (Si) or Silicon Carbide (SiC) power devices. Standard and emerging topologies for high-efficiency (>98%) PV inverters are identified and optimized for the capital cost of power filter components and power devices. Analytical formulae are developed for minimum filter inductance considering both current...
This paper describes the design, construction and performance of a 5 kVA aviation power module containing silicon carbide MOSFETs. The function and control of this module within a commercial aviation power electrical control unit (ECU) application is explained and the power dissipation benefits from the use of these MOSFETs instead of silicon IGBTs when driving an electrical motor controlling an aileron...
Power density increase is one of the challenges of Wind Power Converters and the use of Silicon Carbide semiconductors is a promising solution due to the enhanced performance in terms of switching behaviour. This is demonstrated on an existing Wind Power Converter with a hybrid module of SiC based Diode and Silicon IGBT.
This paper investigates the switching performance of six-pack SiC MOSFET and Si IGBT modules for motor drive applications. Both the modules have same packaging and voltage rating (1.2 kV). The three bridge legs of the modules are paralleled forming a single half-bridge configuration for achieving higher output power. Turn-on and turn-off switching energy losses are measured using a standard double...
The U.S. offers multiple mechanisms for funding both small and large businesses to promote innovations in science and industry. However, dating back to the 80s many U.S. companies have chosen to take products created domestically and manufacture them overseas. This has been a particularly disturbing trend in the semiconductor business leading to the loss of jobs and technical expertise as students,...
This invited paper reviews the evolution of silicon carbide power devices from the initial proposal for wide bandgap semiconductors for power electronic applications in 1979 to current commercially available devices. The potential social impact on this technology on energy savings and the environment is briefly discussed.
This paper analyses new model-predictive modulation strategies applied to hybrid Silicon Silicon-Carbide cascaded H-bridge (CHB) converters. The analysis identifies a suitable ratio of Silicon to Silicon-Carbide cells and the appropriate modulation strategy applied to this topology concept. The evaluation is based on semiconductor losses and harmonic performance.
Wide-bandgap power devices such as those made from silicon carbide (SiC) and gallium nitride (GaN) realize fast switching and it helps to increase the efficiency of power conversion. This report experimentally compares static and dynamic characteristics of wide-bandgap power switching transistors; SiC MOSFET and cascode GaN transistor, and focuses on their characteristics of electromagnetic interference...
The power delivered by a photovoltaic (PV) to the grid must be modified in multiple stages. The operation concept of the micro-inverter is to increase the low output voltage received from a PV panel. Wide bandgap (WBG) power devices such as SiC MOSFETs offer multiple advantages over traditional silicon power devices when are used in a solar energy field due to their high switching frequency, high...
Modern power electronics devices based on SiC power MOSFETs technology become more demanding in the last few years. They show better performance over Si-IGBTs on renewable energy power conversion systems due to their higher switching frequency, higher temperature capability, higher power density and higher reliability. This paper presents a benchmarking of SiC-MOSFET and Si-IGBT power devices with...
4H-SiC MOSFET have been fully characterized in the forward conduction over the temperature range −30°C to 150°C. The distinct characteristics of SiC MOSFET and the Si MOSFET counterpart are compared and explained. A physics-based analytical model for SiC MOSFET has been developed by using the MAST language and simulated with SABER. The influences of the geometry (short channel effects), channel mobility,...
This paper researches the performance benefits of replacing the Si IGBTs and diodes in a power module for automotive drives with either 650 V or 900 V SiC MOSFETs. Evaluating the mean conduction and switching losses in a load profile allows a comparison of both voltage classes in order to show which class offers the lower overall losses in the given application. Furthermore, the influence on the switching...
At high switching speeds silicon pin-diodes can show a significant forward recovery voltage, which appears as a reverse voltage over the anti-parallel IGBT. The avalanche breakdown of the IGBT floods its base-region with electron-hole-plasma, which is extracted when the diode is turned-off again after a while and contributes to the diode's reverse recovery peak. This effect increases the losses and...
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