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Silicon Carbide (SiC) MOSFET power module has become commercially available in the past few years, and it is attractive in solid state transformers (SSTs) applications to replace Silicon (Si)-based IGBTs. This paper is focused on the efficiency comparison between a SiC MOSFET-based three-port active bridge converter (TAB) and a Si IGBT-based approach. The efficiency of the overall system, being one...
For high power applications, power modules provide a higher power density than using discrete power devices due to improved thermal performance as well as compact form factor. Since all semiconductor failure and degradation is related to the temperature rise in semiconductor devices, accurate temperature monitoring is necessary and are considered necessary in future generations of wide bandgap power...
According to the BCF theory, a simple surface diffusion model of SiC single crystal was established, and the key parameters such as the surface diffusion length, the critical nucleation and growth rate were obtained by theoretical calculation. The results show that surface diffusion length is 460nmat 2400K and it decreases with the rise of temperature. The relationship between the critical nucleation...
Full-duplex wireless is an exciting emerging wireless communication paradigm that also poses tremendous challenges at virtually every layer: from the antenna interface and integrated circuits (ICs) and systems to the network layer. This paper covers recent advances at Columbia University across all these dimensions. Several potential full-duplex system architectures that are appropriate for different...
This paper presents an evaluation of the performance improvements of using hybrid IGBT modules; Silicon (Si) IGBT and Silicon Carbide (SiC) Diode, in an 225kW dc-dc converter for an electrical storage based light rail vehicle (tramway). First an experimental characterization of the conventional and hybrid IGBT modules is carried out. Second, based in this characterization, the power loss reduction...
A 4H-SiC MOSFET with breakdown voltage higher than 1200V has been successfully designed and fabricated. Numerical simulations have been performed to optimize the parameters of DMOSFET. The n-type epilayer is 10 μm thick with a doping of 6×1015 cm−3. The devices were fabricated with a floating guard ring edge termination. The drain current Id = 10 A at Vg = 20 V, corresponding to Vd = 2.0 V.
With the assistance of in-situ grown graphene on the wafers, semi-insulating 4H-SiC wafers were etched in aqueous KOH using photo-electrochemical method. The etching rate was estimated to be at about 50nm/min. By the cross-sectional scanning electron microscope (SEM) images, triangular structure in a similar size and aligned in the same direction was found on (1–100) face. Whereas on the (11–20) faces,...
Short circuit capability of commercial SiC MOSFETs is analyzed, which is compared with that of commercial Si IGBTs. Junction temperatures during short circuit tests are analyzed in this work. A test bench is designed for short circuit tests of discrete MOSFETs and IGBTs. Commercially available 1200V SiC MOSFETs from Wolfspeed (C2M0080120D) and 1200V Si IGBTs from Infineon (IKW25N120H3) with similar...
SiC Intelligent Power Module (IPM) with high bandwidth integrated current sensors is a future trend to improve the device protection capability and chip utilization. In this work, an integrated current sensing scheme for Silicon Carbide (SiC) MOSFET power module using a Si MOSFET current mirror is proposed, analyzed and tested. The use of Si MOSFET not only lowers the overall cost, but compensates...
Circuit protection devices and power distribution units for future More Electric / All Electric Aircraft (MEA/AEA) power systems require an increased level of control and intelligence along with fast-acting protection mechanisms. The trend towards utilizing solid-state power electronics for system-level protection of MEA/AEA systems has increased due to the many advantages provided over electromechanical...
Wide bandgap (WBG) power electronics is a very small segment of power electronics market (1%) and about 0.05% of the total semiconductor market today. The U.S. has a strong foothold in both the silicon carbide (SiC) and gallium nitride (GaN) markets today, but there exists an increasing competition from Europe, Japan, and China. This work presents market, value chain and energy savings potential analyses...
We explore the intrinsic loss in power switches seen when they undergo charging and discharging of their output capacitance. The intrinsic loss occurs even if switching is carried out at zero current and no on-state current is conducted, and accidental turn-on is avoided. The intrinsic loss cannot be eliminated by using soft-switching schemes and essentially sets an upper limit for the switching speed...
The switching characteristics of vertical Gallium Nitride (v-GaN) diodes grown on GaN substrates are reported. v-GaN diodes were tested in a Double-Pulse Test Circuit (DPTC) and compared to test results for SiC Schottky Barrier Diodes (SBDs) and Si PiN diodes. The reported switching characteristics show that GaN diodes, like SiC SBDs, exhibit nearly negligible reverse recovery current compared to...
High-current, large-area single SiC JBS diodes rated at 650V-200A and 1200V-100A were fabricated on a 150mm platform that demonstrate a low VF of 1.5V. The diodes exhibit a specific differential resistance, Rdiff, sp, of 0.74 and 1.65 mΩ-cm2, respectively. The devices were tested with similarly rated Si-IGBTs and the reduction in switching losses and QRR evaluated. The high-current diodes have also...
FREEDM-Pair is an innovative power semiconductor switch which reduces the loss and cost through the hybrid integration of a Si IGBT and a SiC MOSFET. During the turn-off of the FREEDM-Pair, the Si IGBT is turned off first under ZVS condition and after a carefully selected delay time, the Si MOSFET is turn-off. In this way, the IGBT's turn-off loss is significantly reduced due to the ZVS turn-off condition...
This paper deals with the design of a DC/DC boost converter aimed at Fuel Cell Vehicle (FCV) application. In order to extend the FC lifespan and to increase the reliability, efficiency and power density, a DC/DC boost converter should be designed with the following features: low current ripple, low weight, low volume, and high redundancy. In this study, a 6-phase Interleaved Boost Converter (IBC)...
We discuss the results of the design and examination of high-voltage superfast opening switches — the drift step recovery diodes (DSRD) based on silicon carbide. The fabricated diodes have p+-p-n+ structure with relatively thick low-doped base region, which allows switching voltage of 1.8 kV in less than 500 ps. With 4H-SiC DSRD operating as an opening switch in an ultrashort pulse generator circuit...
In this paper, we investigate the error performance of the amplify-and-forward two-way relay network, which consists of two user terminals and one relay node. All the nodes operate in the full-duplex (FD) mode, the impact of residual self-interference on the decoding at the user terminals is also considered. The asymptotic expression of pairwise error probability in the high transmission power regime...
Synchronization problems are inevitable in in-band full-duplex (IBFD) systems due to arrival time misalignment between self-interference (SI) and the desired signal. We begin by showing that the timing misalignment significantly affects the performance of digital SI cancellation (SIC) or signal detection when conventional synchronization is used. The conventional synchronization method introduces...
High efficiency is among the most important targets in power electronic converters. A possible approach to obtain this goal is the usage of better switches. This paper is focused at the study and comparison of SiC and Si power MOSFETS in soft switching resonant DC/DC converter. The latter converter being a part of light battery charger used in ultra-light electric vehicles is realized and investigated...
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