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Power semiconductor devices made with wide-bandgap (WBG) materials such as Silicon Carbide (SiC) are improving the energy conversion efficiency, power density, and switching performance of converters. This paper presents a comparative performance evaluation of Si IGBT, SiC JFET, and SiC MOSFET power devices implemented in an otherwise identical, non-isolated dc-dc boost converter. Switching characteristics...
This paper investigates the benefits of using high-voltage converter cells for transmission applications. These cells employ ultrahigh-voltage SiC bipolar power semiconductors, which are optimized for low conduction losses. The Modular Multilevel Converter with half-bridge cells is used as a test case. The results indicate a reduction of converter volume and complexity, while maintaining low losses...
An analysis of the failure modes due to short circuit on planar and trench 1200ν — 40mΩ SiC-MOSFETs is presented, including single and multiple events. Short circuit waveforms, energy, as well as electro-thermal simulations are presented, enabling the identification of the main root causes of failure. Results demonstrate similar performance regarding failure after turn-off (thermal runaway, gate)...
Wide bandgap (WBG) semiconductors can be used at high switching frequency and have a high breakdown voltage and high junction temperature rating which make them appealing for use in power conversion. This paper sets forth a rigorous multi-objective optimization based design paradigm for a DC generation system. Using this paradigm, the loss versus mass trade-off (i.e. Pareto-optimal front) of the generation...
This study compared the results of room temperature direct wafer bonding of SiC-SiC accomplished by standard surface activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam, in terms of bonding energy, interface structure and composition as well as the effects of rapid thermal annealing (RTA). Compared with that obtained by standard SAB, the bonding interface of modified SAB with...
The US Navy's recent reduction of the dc bus voltage for the new surface combatant, from the original 20 kV to the new target of 12 kV, opens up the design space to a broader range of options than was possible to date. This paper is an attempt to address the opportunities and risks associated with the adoption of multi-level topologies and Silicon-Carbide switches in the design of power converters...
Silicon carbide (SiC) is a most promising alternative material for the next generation of high-power and high-temperature devices duo to excellent performance, such as larger thermal conductivity compared with Silicon. The thermal conductivity of SiC bulk, as well as temperature dependence of thermal conductivity has been investigated in terms of simulations and experiments. However, when the characteristic...
At present, the SiC devices have been widely concerned with the excellent characteristics of low switching losses, which can significantly improve the frequency of power electronic converters, and also have broad application prospects in the field of rail transportation. In this paper, through the establishment of 1500V powered subway auxiliary inverter loss model, the author estimated loss and efficiency...
In general, current wireless system, either for area networks or point-to-point links, cannot transmit and receive signals in both directions in the same frequency band and at the same time because of the extremely high self-interference, which annihilates the desired signal, making the use of half-duplex methods strictly necessary. In order to achieve full-duplex wireless communications, it is crucial...
Recent advances in self-interference cancellation (SIC) techniques have made the implementation of Full Duplex (FD) possible. FD technology promises doubling the capacity of wireless networks without needing new frequencies, by enabling communication devices to receive and transmit at the same time and frequency. However, when considering the overall communication networks, gains may be less significant...
In this paper, a 400kHz high-frequency dual-buck inverter is fabricated for the applications of small scale renewable energy generation. A systematic calculation method for the converter's loss distribution is proposed to evaluate the efficiency. This method concerns the impacts caused by the high frequency on the loss distribution, which are always neglected by the traditional method. In the last,...
This paper is mainly focus on bidirectional on-board charger with high performance and low cost. With SiC MOSFET, it is possible to make the on-board charger high efficiency, high power density and light weight. However, the price of the SiC MOSFET is higher than Si based MOSFET. Therefore, a high performance on-board charger with a small number of SiC MOSFET is the key factor to limit the cost of...
The paper presents the work-in-progress in developing since 2016 and using the "Network Security Intelligence" educational and research center (NSIC) in the framework of the NRNU MEPhI's Institute of Cyber Intelligence Systems (ICIS). The NSIC currently consists of two bearing laboratories with Next-Generation Firewall (NGFW) and Data Loss Prevention (DLP) system as their cores respectively...
This paper considers a multiuser system with one full-duplex (FD) base station (BS) serving a set of half duplex (HD) mobile users. Due to the self-interference and co-channel interference from the uplink users to the downlink users, the transmissions of the BS and uplink users have to jointly designed. In this paper, we consider such a joint design problem for maximizing the max-min-fairness (MMF)...
This paper reports the findings of a study to characterize the resonant behavior of high-aspect ratio, NEMS-scale 3C-SiC diaphragms. The diaphragms consisted of single crystalline 3C-SiC films that were grown by APCVD and created by Si bulk micromachining. The diaphragms were excited into resonance under vacuum and assessed using optical interferometry. Over 40 resonant peaks were observed for a 250...
By simultaneously considering the enhancement of quantum confinement on the effective bandgap and minimum transition energy, the silicon (Si)/ silicon carbide (SiC) quantum dot superlattice (SiC-QDSL) with aluminum oxide (Al2O3-QDSL) passivation layer shows the high short-circuit current (Jsc) of 4.77 mA/cm2 in theoretical, which agrees with the Jsc of 4.75 mA/cm2 obtained in the experiment under...
This paper presents thermal characteristics of rotor-side converter (RSC) in doubly-fed induction generator (DFIG) wind turbines (WTs). A numerical power loss and thermal model simulator has been developed to obtain instantaneous junction temperature of power devices for a wide operating range of RSCs. Thermal performance of four RSC candidates, including Si IGBT based 2L / 3L-NPC / 3L-ANPC RSCs and...
Silicon carbide (SiC) is a well-known material in the field of high temperature and high voltage electronics thanks to a high thermal conductivity, high electric field breakdown strength and high maximum current density [1]. Simultaneously with a strong inertness and a low thermal expansion, this makes silicon carbide a good material for extreme condition sensing [2]. The fact that the cubic structure...
SiC devices are expected to operate at much higher temperature than Si devices. However, commercially available SiC devices are limited to the temperature almost same as Si devices. In order to operate SiC devices at high temperature, it is necessary to improve package technology and to design SiC devices properly for high temperature. In this study, robustness against thermal runaway of SiC-SBD is...
Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have the potential to increase the power density in power electronics converters compared to the currently used silicon (Si). Their benefits are higher efficiency, higher switching speeds, and higher operating temperatures. Moreover, SiC MOSFETs, which are normally-off, offer the possibility to directly replace Si Isolated-Gate-Bipolar-Transistors...
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