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The purpose of this paper is to study the MOSFET stress sensor behaviors and to develop the related measurement methodology. With the newly developed technology, the piezoresistance coefficients of the MOSFET were extracted, and the strain and temperature effect induced MOSFET characteristics were obtained. The results of this study can be used to adjust the chip structure in a packaging so that the...
This paper reports on the simultaneous and independent measurement of mechanical stress and temperature using p- and n-channel field-effect transistor structures with multiple drain/source contacts fabricated in a commercial complementary metal-oxide-semiconductor technology. The respective average stress sensitivities of of three p-channel devices and 66 of two n-channel devices at room temperature...
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