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This invited talk will present a summary of the millimeter-wave wafer-scale phased array work at UCSD. This concept can drastically reduce the cost of millimeter-wave phased arrays by combining the RFIC blocks, antennas, power distribution and summing, digital control and up and down converters all on the same wafer (or large piece of silicon), and eliminates all RF transitions in and out of the chip,...
We study the strain characteristics of thin SiGe layers on insulator processed by the germanium condensation technique. We perform dark-field electron holography measurements and show the relation between strain and Ge content in the layers. The characteristics of the condensation process are discussed for the realization of co-integrated MOS structures.
The Silicon Valley is home to many successful tech companies and is considered the incubator of innovation. The purpose of this paper is to investigate the circumstances and reasons why the Silicon Valley is so prosperous. After grouping tech companies into six major categories, a variety of parameters, such as revenue, profit, andreturn of investment, were used throughout this analysis to determine...
Models for cache yield and coverage for radiation-induced soft errors quantify the trade-off between the minimum supply voltage (VMIN) and the soft-error protection when applying error-correcting codes (ECC) to a cache. Model predictions of the VMIN benefit and soft-error coverage agree closely with silicon measurements from a 7Mb data cache in a 20nm test chip when considering either single-error...
We studied the carrier multiplication efficiency in bulk silicon using optical-pump/THz-probe spectroscopy. By the close analysis of the time resolved data, we observed the enhancement of the quantum efficiency due to carrier multiplication for incident photon energy above 4.1 eV. It agrees well with the results of photo current measurements. We believe that the present results enable us to correlate...
We present measurements of the quantized current delivered by a hybrid metal/semiconductor electron pump. Here we report on the dependence of the quantized current as a function of various control parameters at temperatures below 1 K. This characterization was done with a 20000 turns cryogenic current comparator (CCC) in internal feedback mode. Stability measurements over more than 10 hours have demonstrated...
According the diameter measurement of single crystal silicon in the growth process to put forward a diameter detection method that a circle defined by three points not in the same straight line. First, pretreat the growth image of single crystal silicon. Then, according the algorithm that a circle defined by three points not in the same straight line to extract the feature points, and the diameter...
In the present paper, a chip with a Pt-based RTD that functions as a heater and sensor is tested under serial power loads, and infrared (IR) thermal imaging system is adopted to obtain the thermal measurement. Comparisons of the hotspot temperatures of the chip obtained by RTD and IR methods have been made, where different surfaces of the chip were observed by the IR camera. Combing with the heat...
The homogeneity of the lattice spacing of silicon single crystals was investigated by the self-referenced lattice comparator. Strain measurements were performed on single crystals from Avo28 ingot, which was used to determine the Avogadro constant. A swirl pattern was observed for the sample of 9.R1 cut from the Avo28 ingot.
We have proposed to place an RF circuit and an antenna on each side of a silicon chip in the 60 GHz band, respectively, and to connect between them with low loss by a coaxial-line structure using a hole opening in the chip. In this paper, we fabricate a 2×2 circularly polarized patch array in an area of 5 mm square on a silicon chip and have coaxial-line connection with a separated quadrature oscillator...
In this paper, a method to extract the signal-to-noise ratio (SNR) is proposed for the Si nanowire (Si-NW) biologically-active field-effect transistors (BioFETs). We have fabricated the devices using CMOS compatible process and demonstrated specific alpha fetoprotein (AFP) detection using the monoclonal antibody of AFP. The low-frequency noise was measured to calculate the parameter. Using our method,...
The spectral response and responsivity of a GeSn photoconductor were measured from 300 to 77 K. The maximum responsivity of 0.06 A/W was measured at 1550 nm for 10 volts bias at 140 K.
In this paper two Porous Silicon (PS) measure configuration (Al/PS/p-Si/Al and Al/PS/Al) are presented. Admittance as a function of frequency and dc bias voltage were in detail analyzed. Admittance spectroscopy is a power tool in the study of semiconductors. We find out conductance and susceptance of single and multilayer structures. Moreover this diagnostic technique gives information about structural...
Silicon nanowire-based biosensors have been identified as a promising biosensing technology. However, it suffers from the interface signal process to be applied into applications. In this paper, we utilize a readout circuit to directly transfer the signal obtained from a Si nanowire based sensing device into digital format. Based on the experimental results, cTnI and NT-proBNP, the biomarkers for...
The amplitude of the photoacoustic (PA) elastic bending signals vs. the modulation frequency of the excitation optical beam for the chip with Si cantilevers were measured and analyzed. The experimental PA elastic bending signals of the whole micromechanical structure were measured by using special constructed PA cell (the gas-microphone detection technique with transmission configuration). The PA...
This paper deals with comparisons of noise spectroscopy and I-V characteristic of semiconductor lasers diodes GaAs with InAs quantum dots layer. We studied two groups with different technologies (A and B). Each group had 4 samples. The samples were quality screened using noise analysis. From the measurement results it follows that the noise spectral density related to defects is of 1/f or and can...
In this paper, Frontier Semiconductor will introduce a new technology that is referred to as Virtual Interface Technology (VIT™). VIT™ is a Fourier domain technique that utilizes temporal phase shear of the measurement beam. The unique configuration of the sensor enables measurement of wafer and bonded stack thicknesses ranging from a few microns to millimeters with measurement repeatability ∼ nm...
In the present paper, a chip with a Pt-based RTD that functions as a heater and sensor is tested under serial power loads, and infrared (IR) thermal imaging system is adopted to obtain the thermal measurement. Comparisons of the hotspot temperatures of the chip obtained by RTD and IR methods have been made, where different surfaces of the chip were observed by the IR camera. Combing with the heat...
Compound (2,1)-mode Silicon (Si) disk resonators with double ended tuning fork (DETF) absorbers connected to anchors have been proposed to reduce the vibration energy leak into the Si substrate through anchors. The optimal dimensions of DETF absorber was evaluated by minimizing strain energy calculated from FEM. Si disk resonators with and without the DETF absorbers were fabricated by means of surface...
This paper outlines applications of terahertz spectrometry, terahertz reflectometry and sub-surface imaging for effective characterization of various aspects of semiconductor wafer testing. Exemplary results of scanning a wafer have been analyzed for defect determination. Additionally, terahertz reflectometry for controlling wafer polishing for planarization has been exemplified via high precision...
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