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In this paper we report on results concerning the texture and mechanical stress of thick polycrystalline silicon films, grown in an epitaxial reactor. These phosphorus doped films were subjected to different annealing treatments at temperatures at or above 1100 °C in nitrogen and oxygen ambients, respectively. The morphology and texture of the films, respectively, were obtained using TEM and X-ray...
We report here results concerning characterisations of polycrystalline textured diamond films with the purpose of determining the parameters responsible for the texture, growth rate and surface morphology. Beyond the influences of methane concentration and substrate temperature on these characteristics, the influence of microwave power density (p MW ) is studied. An increase of both diamond...
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