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The reliable fabrication of interconnects containing ultra low-k organosilicate dielectrics (ULK) has been a significant technological challenge. ULK's are inherently fragile with reduced elastic constants. In addition, their Si-O backbone makes organosilicate films prone to moisture-assisted cracking leading to serious reliability concerns. In this study, we investigated the mechanical properties...
Opto-Electronic Modulation Spectroscopy (OEMS)technique is applied on polycrystalline silicon thin-film transistors (poly-Si TFTs) to investigate the distribution of bandgap states at grain boundary (GB). Both the current and the phase response spectrums are obtained by analyzing the position and characteristic of gap states at GB. Four discrete bulk trap states in 0.25 eV, 0.45 eV, 0.59 eV, 0.76...
The structural characteristics, deposition rate, absorption spectra and optical band gap of the silicon-germanium thin films, which were prepared by RF-PECVD, had been researched under the diffferent Germane's concentration. By test of Raman, all the silicon-germanium thin films presented amorphous and the spectral peaks were located around 480cm-1. According to the trend of optical band gap, the...
The interest to silicon-diamond structures was recently renewed motivated by industry's needs for composite substrates and better thermal management. In this work we investigated thermal conductivity and thermal boundary resistance (TBR) of ultrananocrystalline (UNCD) and microcrystalline diamond (MCD) films on silicon. The measurements were carried out using the transient plane source (TPS) technique...
In this work are discussed the technology for preparing and characterisation of indium-tin oxide (ITO) and ITO with titanium oxide underlayer thin films with properties appropriate for usage at elevated temperatures as heat reflective coatings and gas sensors. For preparing the samples the methods of radio frequency (RF) and DC-magnetron reactive sputtering were used. Sputtering of indium-tin and...
In this work structural properties of TiO2 thin films doped with different amounts of Nd have been presented. Thin films were deposited on silicon substrates using high energy reactive magnetron sputtering process and for the measurements TiO2 doped with 0.84 at. % and 8.51 at. % of Nd have been selected. Diversification of the thin film surface was investigated using atomic force microscope. The...
We demonstrate energy resolved spin dependent trap assisted tunneling in 1.2 nm effective oxide thickness silicon oxynitride film subject to room temperature electric field stressing. Our observations introduce a simple method to link point defect structure and energy levels in a very direct way. We obtain defect energy level resolution of SILC related defects by exploiting the enormous difference...
This paper describes the experimental results of our recent attempt to synthesize device quality ZnO thin films on silicon and sapphire substrates by means of chemical vapor deposition. The surface features and crystal quality of these films are studied by scanning electron microscope and optical spectroscopy, respectively. Although it was not successful to deposit crystalline thin film on silicon...
The thermal evaporation technique was used to deposit the zinc (Zn) films on Si(111) substrates. ZnO thin films were obtained in an inexpensive and simple way by thermally oxidizing granulated Zn films at 900°C in air for 1 hour without any catalyst. ZnO thin films have a hexagonal wurtzite structure. The structural and optical characteristics of ZnO thin films samples were investigated by scanning...
Technology of amorphous hydrogenated silicon (a-Si:H) thin films is a subject of interest of many researchers. This paper deals with the re-crystallization processes in a-Si:H thin films prepared by plasma enhanced chemical vapour deposition (PECVD) using a SAMCO PD-220N unit. Evaluation of crystallization process was monitored in a high temperature chamber AP1200 by using “in-situ” X-ray diffraction...
In this paper, we have discussed three intrinsic reliability issues of thin-film -Si:H solar cells; space charge limited shunt conduction through localized metal-semiconductor-metal structures; shadow degradation in series connected cells in a module, and light induced degradation. Despite their distinct external manifestation, these intrinsic reliability issues appear to share common physical phenomena...
Thin films bonded to substrates commonly occur in semiconductor dielectric stacks. In these systems, many times, the mismatch in the coefficient of thermal expansion between the films and the substrate result in significant compressive stresses during processing. These compressive stresses may lead to instabilities such as buckling or wrinkling, possibly resulting in debonding of the films. In general,...
We have proposed a method to grow a polycrystalline silicon (poly-Si) film on quartz substrate at low-temperature (<;450°C) by using a polycrystalline yttria-stabilized zirconia (poly-YSZ) film as a seed layer. It was found out that the crystallization of the Si film strongly depended on the surface treatment of the YSZ seed layer. We obtained the crystallized Si film by direct deposition on the...
Shock-induced failure of polysilicon MEMS is investigated by adopting a multi-scale approach. To understand the capability of this approach and to assess its accuracy, we compare the failure forecasted through two-scale and three-scale simulations. In the first case we model the response of the device to the shocks at the package level (macroscopic scale) and at the sensor level (mesoscopic scale)...
Si-doped AlSb polycrystalline films were grown on silex by magnetron co-sputtering. The conducting type, Hall mobility and carrier concentration of the films were determined. The films appear to be p-type indicating Si is shown to be predominantly an acceptor in AlSb, and holes as dominant charge carriers. Scanning electronic microscope (SEM) shows that prepared film is uniform and compact. The conductivity...
In this study, the numerical investigation was adopted to analyze the deposition characteristic of polycrystalline silicon in a rib reactor. Fluent 6.2 was utilized to simulate the simultaneous momentum transfer, energy transfer and mass transfer, and to couple the gas-phase reaction with surface reaction in SiHC13 -H2 system. Computed flow structure, thermal and species distributions indicated that...
GaN is a promising material for neutron detection applications, with advantages over Si and GaAs. GaN films doped with Gd have been grown by MOCVD and investigated for their feasibility for neutron detection. The films were structurally and electrically characterized through HRXRD and Hall effect measurements. Alpha particle luminescence of both doped and undoped films was used to investigate gamma...
We have grown Si/Ge nanodot superlattices via low-pressure chemical vapor deposition in order to analyze their performance as thin-film solar cells. Self-assembled Ge nanodots are included in the base region in order to boost absorption of near-infrared photons and to increase short-circuit current density, Jsc. At a relatively low dot density of 5.5 ?? 109 cm-2, both 20- and 40-period cells exhibited...
CdS polycrystalline thin films were fabricated by magnetron sputtering and the influence of substrates, sputtering powers, pressures, and substrate temperatures on the structure of thin films is investigated. The films deposited on substrates of glass, quartz, SnO2: F and p-type single silicon are hexagonal phase and they grow preferentially along (002) planes. As the radio-frequency power and substrate...
In this work, we studied the fabrication and characterization of strain sensors based on semiconductor materials for high temperature applications: non-stoichometric amorphous silicon carbide (a-SixCy) thin film and SOI (Silicon-On-Insulator) substrates. a-SixCy were deposited onto thermally oxidized (100) Si wafers by plasma enhanced chemical vapor deposition (PECVD) technique using silane (SiH4)...
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