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Among all emerging memories, Spin-Transfer Torque Random Access Memory (STT-RAM) has shown many promising features such as fast access speed, nonvolatility, compatibility to CMOS process and excellent scalability. However, large process variations of both magnetic tunneling junction (MTJ) and MOS transistor severely limit the yield of STT-RAM chips. In this work, we present a recently proposed sensing...
A nondestructive self-reference read scheme (NSRS) was recently proposed to overcome the bit-to-bit variation in Spin-Transfer Torque Random Access Memory (STT-RAM). In this work, we introduced three magnetic- and circuit-level techniques, including 1) R-I curve skewing, 2) yield-driven sensing current selection, and 3) ratio matching to improve the sense margin and robustness of NSRS. The measurements...
Novel nonvolatile memory technologies are gaining significant attentions from semiconductor industry in the competition of universal memory development. We used spin-transfer torque random access memory (STT-RAM) and resistive random access memory (R-RAM) as examples to discuss the implication of emerging nonvolatile memory for tools and architectures. Three aspects, including device and memory cell...
The general purpose of spin-electronics is to take advantage of the spin of the electrons in addition to their electrical charge to conceive innovative electronic components. These components combine magnetic materials which are used as spin-polarizer or analyzer together with semiconductors or insulators. SPINTEC Laboratory works on the development of these components and their integration in innovative...
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