The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The memristor is a kind of special nonlinear circuit element, its appearance draws worldwide attention in electro circuit research and designing since HP laboratory released the invention on May 1, 2008. In this paper, physical model of memristor is described, mechanism of charge memory is proved mathematically by analyzing physical realization of memristor, and hot issues about it are analyzed. In...
The emerging nonvolatile memory technologies are gaining significant attentions from semiconductor in recent years. Multiple promising candidates, such as phase change memory, magnetic memory, resistive memory, and memristor, have gained substantial attentions and are being actively pursued by industry. In this paper, we will give a 360 degree introduction on emerging non-volatile memory technologies...
We report studies on nanoscale Si-based memristive devices for memory and neuromorphic applications. The devices are based on ion motion inside an insulating a-Si matrix. Digital devices show excellent performance metrics including scalability, speed, ON/OFF ratio, endurance and retention. High density non-volatile memory arrays based on a crossbar structure have been fabricated and tested. Devices...
We propose and analyze a circuit comprising of three memristors, three switches and a driver. The circuit computes the logistic map and thus acts as an example of a simple memristive circuit with chaotic behavior. For the analysis of the circuit we also describe how analog computation can be performed with certain type of voltage controlled memristors. Simulation results validating the theory are...
A method to utilize the memristor as a multilevel memory has been proposed. There are several roadblocks in the practical use of memristors for multilevel memory. A difficulty comes from the nonlinearity in the ?? vs. q curve which makes it difficult to determine the proper pulse width for desired resistance values. Another one comes from the property of the memristor which integrates any kind of...
Spintronic memristor devices based upon spin torque induced magnetization motion are presented and potential application examples are given. The structure and material of these proposed spin torque memristors are based upon existing (and/or commercialized) magnetic devices and can be easily integrated on top of a CMOS. This provides better controllability and flexibility to realize the promises of...
In recent years, many researchers have proposed the usage of molecular scale devices exhibiting negative differential resistance (NDR) in the realization of programmable logic circuitry. This paper deals with the utilization of one such system built from NDR based circuitry, specifically the Goto pair, in the implementation of a programmable threshold logic array (PTLA). Furthermore, the PTLA considered...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.