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In Three-dimensional (3D) Integrated Circuit (IC), dummy TSVs are often required for thermal and thinning concerns. In this paper, we propose to use those “timing wasteful” dummy TSVs for timing optimization in on-chip memory, that is to replace bit line delay cells with dummy TSVs. The delay time is measured with different TSV sizes, TSV arrays, and technology nodes. Three memories are employed to...
This paper addresses the issue of delivering power to high performance 3D stacks such as a processor on cache stack. Through Silicon Vias (TSVs) with their associated keep out zones (KOZ) occupy only a small fraction of the die (
Planar Strain mapping of interconnects, such as Ball Grid Arrays (BGA) and Through-Silicon Vias (TSVs), is an important step in the development and testing of electronics packages, as excessive strain can lead to device failure. Today, the two most widely adopted methods of experimental strain field measurement, Digital Image Correlation and Moiré Interferometry, encounter limitations when the average...
An ultra-thinning down to 2.6-um using 300-mm 2Gb DRAM wafer has been developed. Effects of Si thickness and Cu contamination at wafer backside in terms of DRAM yield and retention characteristics are described. Total thickness variation (TTV) after thinning was below 1.9-um within 300-mm wafer. A degradation of retention characteristics occurred after thinning down to 2.6-um while no degradation...
Low cost through silicon via (TSV) technology is a key enabler for the future performance growth of various semiconductor devices. Deep etching and solder filling for TSV through pre-stacked silicon wafers make the TSV process much simpler. Polymer insulator also contributes to stress reduction and conformal insulation. In this paper, we investigate the barrier effect of polymer insulators on metal...
A multi-chip stacked package using through silicon-vias (TSVs) still has the reliability concerns due to tremendous number of TSVs and micro-bumps in the stacked chips. Cu-filled TSVs may bring about process-induced failures as copper protrusion or copper diffusion into silicon lattice. Micro-bumps have various failure modes such as non-wet, bump cracking, and head-in-pillow joints, which are obviously...
This paper investigates the influence of TSV noise coupling on nearby devices based on an extended 3D TSV circuit model. This model not only takes into account the complex RF field distributions in bulk Si, but also incorporates the anomalous TSV capacitance inversion behavior, which has been found to occur due to the presence of fixed charges in the backside passivation layer after wafer thinning...
3D-Through Silicon Via (TSV) with Cu-pillar/SnAg micro-bump vertical interconnection becomes popular for 3D chip stacking packages. Among various Cu-pillar/SnAg micro-bump bonding methods, NCFs combined with a thermo-compression bonding method have been introduced for fine pitch bump TSV assembly. However, NCFs thermo-compression bonding has some problems of molten solder wetting not only on the Cu...
The impact of wafer level reliability of TSV has been studied with respect to FEOL (Front End of Line) and BEOL (Back End of Line) reliability aspects. A TSV keep out zone (KOZ) study has been done with varying gate length and width of transistor. Gate voltage (Vg) vs saturation current (Idsat) plots show that there is negligible impact on Idsat due to mechanical stress of the TSV for
In this paper, we present a Through-Silicon-Via (TSV)-based 3D tunable inductor for multiple band filter applications. MEMS (Micro Electro-Mechanical Systems)-based switches are implemented to vary inductance by activating and deactivating the switches. MEMS-based switches are fabricated and modeled to implement the tunable inductor. Detailed 3D full-wave simulation results are presented for different...
The PARADIGM (Photonic Advanced ResearchAnd Development for Integrated Generic Manufacturing) European Union Project focuses on design and fabrication ofcomplex photonic integrated circuits (PICs) at low cost. A partof the project was to design a generic package for diverse PICs, and a co-planar waveguide with through silicon vias (TSV) wasa requirement therefor. The through silicon vias shouldimprove...
High performance 3D integration Systems need a higher interconnect density between the die than traditional µbump interconnects can offer. For ultra-fine pitches interconnect pitches below 5µm a different solution is required. This paper describes a hybrid wafer-to-wafer (W2W) bonding approach that uses Cu damascene patterned surface bonding, allowing to scale down the interconnection pitch below...
Deep Reactive Ion Etch (DRIE) processes used to form Through Silicon Vias (TSVs) achieve high aspect ratios by depositing polymer on the vertical sidewalls of the features. This polymer material must be removed before other materials (including dielectric liner, Cu barrier, and Cu) are deposited in the TSVs. Clean processes adapted from Cu damascene integration flows use a combination of oxygen ash...
3D WLCSP using via last TSV (through silicon via) technology is an ideal packaging technology to meet small-form-factor, high I/O density, high-speed and most important, lower cost. For thin 3D WLCSP with TSVs, a number of critical processes need to be developed such as oxide etch, via cleaning and wafer de-bonding. In the present paper, processes for 8 inch, thin WLCSP with TSV diameter of 40µm and...
MEMS devices are continuous evolving to achieve smaller size and lower cost with improved performance. The Through silicon via (TSV) technology offers a promising approach from the perspective of MEMS device packaging and integration. In this paper, we report our latest progress on wafer level packaging of MEMS devices by via-last process. The 200mm MEMS wafer was bonded with a glass cap wafer. Then,...
Through-silicon vias (TSVs) are one of the fundamental technologies that enable vertical stacking of active dies. In this paper the integration cost of TSVs is investigated for different integration options: TSV middle and TSV last processing. Each processing step in the TSV integration flows is analyzed and the impact of processing options on cost is evaluated. Different TSV geometries are also considered...
Open Through Silicon Vias (TSVs) are interconnections in three dimensional technologies. The tungsten material is usually employed as conductor line and it has high value of tensile intrinsic stress. The stress generated during the deposition process needs to be studied in order to avoid the mechanical failure of the TSV. We simulated the tungsten Volmer-Weber growth for a full plate sample. Subsequently,...
Through Silicon Via (TSV) was original proposed for the three-dimensional (3D) IC packaging and now is realized in the high band width DRAM (HBM) application. TSV is also utilized in a passive silicon interposer and the insertion of such interposer into a flip chip packaging created another packaging platform commonly known as 2.5DIC for high density multiple ICs integration. However, since the 1st...
In this paper, we show that using the relation between the inductance matrix and the capacitance matrix in a homogeneous medium to extract the coupling capacitance in a through silicon via (TSV) array is inaccurate. This is because this relation assumes a lossless, homogeneous surrounding medium. We show that this model can cause an error up to 70% in coupling capacitance compared to Q3D extractor...
This paper presents a 3D circuit model capable of rapidly and accurately evaluating substrate noise coupling in the context of 3D integration. Since TSVs are large and noisy structures, the evaluation of electromagnetic coupling to and from TSVs has become crucial to the design of threedimensional integrated circuits. In this work, we present a fast and accurate 3D circuit model to this end. The model...
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