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The bending effects on resistive switching of NiO/ZnO nanocomposite thin films fabricated by sol–gel spin-coating method were investigated. The switching is induced by the cooperation of different Schottky barrier height at the NiO/ITO interface and the formation/rupture of tree-like filamentary paths due to the field-induced migration of oxygen vacancies and oxygen ions. The as-fabricated films showed...
Oxygen vacancy effect on the electronic state of Pt/NiO/Pt capacitor-like system is theoretically investigated by density functional theory (DFT) based first-principles calculations. The potential energy profile for electrons at the interface between Pt and NiO is found to play a major role on the transport properties alternations where conduction path begin to construct. Oxygen vacancies effect is...
For the first time, a new technical solution is presented to essentially improve the uniformity of oxide based RRAM devices by using material design methodology based on first principle calculations. The results indicate that doping of trivalent elements such as Al, La, or Ga into the tetravalent metal oxides such as HfO2 or ZrO2 effectively controls the formation of oxygen vacancy filaments along...
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