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We propose a new spintronics-based memory employing the voltage-control-magnetic-anisotropy effect as a bit selecting principle and the spin-orbit-torque effect as a writing principle. We have fabricated the prototype structure, and successfully demonstrated the writing scheme specific to this memory architecture.
Magnetic Random Access Memory (MRAM) is an emerging memory technology. Among existing MRAM technologies, the Thermally Assisted Switching (TAS) MRAM technology offers several advantages such as selectivity, single magnetic field and high integration density. In this paper, we analyze resistive-bridge defects that may affect the TAS-MRAM architecture. Electrical simulations were performed on a hypothetical...
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