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The strain of components at high temperature was usually measured by thin film strain gage prepared on the components. However, temperature effect caused by the thermal expansion coefficient mismatch between substrate and strain gage film usually induces the measurement error of metal film strain gage. This paper reports a novel temperature compensation method for in-situ prepared PdCr strain gage...
Graphene oxide is solution-process able and widely tunable semiconductor which has potential applications as transparent electrode materials in organic solar cells as well as chemical sensors and interconnects. It is also amenable to micro-patterning with laser-induced heating. Density of defects and water permeation are among the major factors affecting the degree of conduction in reduced graphene...
In this work, some initial efforts to determine the physical properties of metallic films with thickness values below 200 nm are described. The proposed methodologies to measure the temperature coefficient of resistance, the specific heat, thermal diffusivity, thermal conductivity values of Au, Al, and Cu films as such as the elastic modulus of metallic nano-alloys are discussed. The thermal properties...
This work reports the synthesis and characterization of few layers graphene (FLG) film, which was grown by using a home-made APCVD set-up. The FLG films were grown on evaporated polycrystalline nickel films under a mixture of argon and methane with a relatively large-flow and for very short deposition times. The experimental parameters such as the argon/methane ratio and temperature were varied from...
This paper describes the improved performance of thin film multijunction thermal converters (TFMJTC) that has been developed by NMIJ and NIKKOHM Co. Ltd. For the former type TFMJTCs, a deterioration of thermocouples was observed. The degradation prevention has been completed by changing the design and fabrication process of the thin-film thermopile to improve the durability of the TFMJTCs. Long-term...
Graphene, a single atom thick material with carbon atoms arranged in a hexagonal lattice is widely being touted as the new wonder material for its interesting electrical and mechanical properties [1]. In particular, the observation of the Quantum Hall effect (QHE) in graphene has opened the way for a new quantum standard of resistance. Our research focuses on QHE and Raman characterization of chemical...
Wafer-scale monolayer graphene film was synthesized on Cu foils by chemical vapor deposition in a 3-in thermal furnace. Graphene film was transferred to the surface of SiO2 (300 nm)/Si substrates using a polymer-assisted method. Hall bar structures were fabricated by lithography and E-beam deposition for the electrical property measurement. Perfect symmetrical ohmic resistance distribution was achieved...
Bismuth Telluride (Bi2Te3) and Antimony Telluride (Sb2Te3) were deposited using pulsed laser deposition (PLD) in the presence of Argon gas. The substrate temperature (T) was varied from 25°C to 450°C. Impedance spectroscopy and four point probe techniques were used to characterize the electrical properties of the films. Nyquist plots were obtained from these measurements for all the films, and an...
Znic telluride (ZnTe) thin films were prepared by thermal evaporation method on n-type Si substrate. The electrical properties of these films were investigated with special emphasis on the effects of a depositing temperature from 540°C to 560°C with an annealing temperature of 800°C by RTA technique. Structural analysis through X-ray diffraction (XRD) was sensitive to the deposition conditions. Crystallinity,...
As a first step AlN thin films were made but no significant strain sensing effect could be produced. Next CrN thin films of varying resistivity were deposited on oxidized silicon wafers by DC reactive magnetron sputtering, using a 99.95% Cr sputter target, a wafer at 200 °C in various nitrogen gas concentrations. The processed wafers were diced into long beams for testing. After the devices were wire-bonded,...
We evaluated the flexibility of screen-printed silver (Ag) circuits under various sintering temperatures. The circuits were built on a polyimide (PI) film by a screen printing technique using Ag nanopaste (73 wt%, 24 nm in diameter, Ag nanoparticles). The sintering temperature was raised from 150 to 300°C while the sintering time was fixed at 30 min. The flexibility was measured by two different kinds...
The polycrystalline samples of BaSi2, SrSi2, and LaSi were prepared by spark plasma sintering (SPS). The electrical resistivity (rho) and Seebeck coefficient (S) were measured above room temperature. The S of BaSi2 was negative and the absolute values were rather high (-669 muVK-1 at 337 K). The S of SrSi2 was positive and the absolute values were lower (118 muVK-1 at 332 K) than those of BaSi2. For...
In this study, we fabricated in-plane thermoelectric micro-generators (4 mm times 4 mm) based on bismuth telluride thin films by using flash evaporation method. The thermoelectric properties of as-grown thin films are lower than those of bulk materials. Therefore the as-grown thin films were annealed in hydrogen at atmospheric pressure for 1 hour in a temperature range of 200 degC. to 400degC. By...
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