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Double‐barrier quantum‐well resonant tunneling heterostructures of GaAs/In0.1Ga0.9As/AlAs have been used as pressure‐sensing elements of designed micro‐electro‐mechanical systems. The static experiments have been conducted on the heterostructure, in both positive and negative differential resistance (PDR and NDR) regions, showing a piezoresistive coefficient of 3.85 × 10−9 Pa−1, which is about seven...
The single dot in magnetic field and double quantum dot with broken spin-orbital symmetry are discussed in the boson field environment. It is shown that the time dependent potential induces the Kondo effect, provided that the single boson energy compensates the spin or orbital splitting. The photon induced recovery of orbital degeneracy can occur within the same spin channel or with the spin mixing...
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