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In this paper we discuss the influence of thermally annealed Schottky metal contact on DC and RF characteristics of n-GaN Schottky diode. The fabrication of n-GaN Schottky diode started with mesa mask RIE etching and then lift off Al as an ohmic contact annealed at 400degC in N2 ambient for 10 min. For Schottky contact lift off Pt, Ni and Pd Schottky metal annealed from 400degC to 600degC for 10 min...
The electrical properties of various metal contacts on n-type GaN at high and low doping concentration (5*1018cm-3 and 1*1015 cm-3) were simulated to determine the underlying trend between the metallic contact work function and the resultant Schottky barrier height between the metal and the GaN material. Pt, Ni, Pd, Au, Co, Cu and Ag metals having different work functions were investigated. Operating...
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