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This paper presents an effective method to restrain galvanic corrosion of polycrystalline silicon (polysilicon) that is electrically coupled with noble metals of microelectromechanical systems (MEMS) devices by hydrofluoric-acid (HF)-based solutions. A titanium (Ti) redox sacrificial layer is added on the noble-metal layer and then covered by photoresist. Benefiting from the lower electrochemical...
Poly-silicon crater defect generated in large plate of n+ poly-silicon on p-type substrate that resulted in gate oxide integrity (GOI) failure in 0.15mum silicon process is investigated. Al tiny particle accidentally introduced from PECVD resistance protection oxide (RPO) deposition is found to be able to translate into such poly-silicon crater defect in the test structure during subsequent oxide...
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