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We present results of deep-level transient spectroscopy investigations of defects in a GaN-based heterostructure of a blue-violet laser diode, grown by plasma-assisted molecular beam epitaxy on a bulk GaN substrate. Three majority-carrier traps, T1 at E_C - 0.28 eV, T2 at E_C - 0.60 eV, and T3 at E_V + 0.33 eV, were revealed in deep-level transient spectra measured under reverse-bias conditions. On...
Lattice-mismatch-induced defects were studied by means of deep-level transient spectroscopy in high-purity GaAs_{1-x}Sb_{x} layers (x = O to 3%) grown by liquid phase epitaxy on GaAs substrates. Microscopic nature and formation mechanism of two electron traps and two hole traps, which appeared in the layers as a result of Sb incorporation into the crystal lattice, are briefly discussed.
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