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A combined operation scheme to realize multibit switching in filament-based bipolar RRAM device is proposed. By combining the modulations of the current compliance in set operations with the stop voltage in reset operations together, the size or the quantity of the filaments in the film bulk can be controlled. An RRAM device with the structure of Ag/HfOx/Pt is fabricated and the 2-bit/cell memory...
The resistive switching memory (RRAM) based on graphene oxide (GO) is demonstrated. The Al/GO/ITO structure with 30 nm thick GO shows stable switching properties. In addition, the device exhibits good reliability and flexibility when fabricated on flexible substrate. The detailed mechanism of the switching operation is also studied.
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