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InAs quantum dots were grown by molecular beam epitaxy in the Stranski-Krastanow growth mode and annealed under N_2 atmospheres at different temperatures. The evolution of quantum dots with the annealing temperature increasing were slightly different with the results reported in the literature. Atomic force microscopy investigations of quantum dots uncapped layer show a size initial increase followed...
The formation of CdSe/ZnSe quantum dots by a method combining a low temperature MBE growth of a CdSe layer and its subsequent in-situ annealing at temperatures between 280-340ºC has been studied. The thermal treatment results in a re-organization of the surface from a nearly two-dimensional layer to an ensemble of three-dimensional dot-like features. In this work we optimized the different growth...
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