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The technology of 3D IC integration is highly probable to achieve the demand for high performance, better reliability, miniaturization and lower-priced portable electronic products. Since the through silicon via (TSV) is the heart in 3D IC integration architectures, the reliability issues of TSV interconnects should be extremely concerned. Due to the large thermal expansion mismatch among the Cu,...
The degradation of SiCr-based thin-film resistors under current and temperature stress and the Joule heating in the resistors are experimentally investigated to set current limitation design rules. Degradation mechanisms, the failure modes, and the impact of the stress test on Temperature Coefficient of Resistance (TCR), are studied with the use of various test structures stressed under different...
In this paper we have studied the application of metallated porphyrin self assembled monolayers (SAMs) as Cu diffusion barriers for ultra-large scale integration (ULSI) CMOS applications. The results for Cu/SiO2/Si and Cu/SAM/SiO2/Si MOS CAP structures are compared through a detailed electrical characterization of threshold voltage shift using bias-temperature studies. Material characterization and...
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