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Highly phosphorous doped epitaxial emitters grown using low-temperature PECVD (LT-PECVD) process have been investigated after subjecting them to different rapid thermal processing (RTP) treatments. Cross-sectional High Resolution Transmission Electron Microscopy (HRTEM) was used to analyze the interface quality and the changes in the atomic arrangement due to the different RTP treatments. Three different...
Homoepitaxial growth of unintentional doped, nitrogen (N) doped n-type, and boron (B) doped p-type 4H-SiC epilayers on off-oriented n-type and semi-insulating Si-face (0001) substrates was performed in a horizontal hot-wall chemical vapor deposition (HW-CVD) reactor with SiH 4 and C2H4 at temperature of 1500 degC and pressure of 40 Torr. The electrical and structural properties, and intentional in-situ...
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