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The concept of atomically controlled processing for group IV semiconductors is shown based on atomicorder surface reaction control in Si-based CVD epitaxial growth. Si epitaxial growth on B or P atomic layer formed on Si(100) or Si1-xGex (100) surfaces, is achieved at temperatures below 500°C. B doping dose of about 7× 1014 cm-2 is confined within an about 1 nm thick region, but the sheet carrier...
By utilizing an electron-cyclotron-resonance plasma enhanced chemical vapor deposition (CVD) for low-temperature epitaxial growth of group IV semiconductors, atomically controlled plasma processing has been developed to achieve atomic-layer doping and heterostructure formation with nanometer-order thickness control as well as smooth and abrupt interfaces. In this paper, recent typical achievements...
C incorporation into Si and SiGe has become essential in modern high-performance CMOSFET technology. The reason is that C atom is markedly useful in growing strained Si film and controlling diffusion of dopant atoms in Si and SiGe layers. In this paper, contribution of C atoms to the growth of strained Si and SiGe films, the activation and the diffusion of B in Si are described. Interstitial C atoms...
Highly phosphorous doped epitaxial emitters grown using low-temperature PECVD (LT-PECVD) process have been investigated after subjecting them to different rapid thermal processing (RTP) treatments. Cross-sectional High Resolution Transmission Electron Microscopy (HRTEM) was used to analyze the interface quality and the changes in the atomic arrangement due to the different RTP treatments. Three different...
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