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A two-terminal memristor device is a promising digital memory for its high integration density, substantially lower energy consumption compared to CMOS, and scalability below 10 nm. However, a nanoscale memristor is an inherently stochastic device, and extra energy and latency are required to make a deterministic memory based on memristors. Instead of enforcing deterministic storage, we take advantage...
To increase memory bandwidth with minimum area overhead, the new concept of 3D-stacked memory structure consisting of a small sense amplifier shared with a few 3D memory cells has been presented. The 16 bit 3D-stacked TiO2 memory chip was fabricated and demonstrated. The estimated bandwidth per unit area of 3D-stacked memory in sub-65 nm CMOS technology indicates that the 3D-stacked memory has potential...
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