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Time-resolved photoluminescence experiments on high quality bulk GaN doped with Gd are presented. It was found that the decay time of Gd-related transitions observed for 4.2 K around 1.78 eV is of about 3 ms. Such a long decay time strongly supports the identification of this emission band as due to transitions between Gd³+(4f⁷) levels. The decay time measured for Gd-related transitions observed in...
A theoretical study of magnetocrystalline anisotropy controlled by in-plane lattice symmetry distortions is presented. The uniaxial strain, only presumed by earlier studies in order to model the observed uniaxial magnetic anisotropy, has recently become an experimentally accessible parameter. We show that the lithographically induced strain can compete with intrinsic symmetry breaking, easy axes can...
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