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We report on the effects of post-growth annealing on the photoluminescence properties of Ga(In,N)As/GaAs(N) quantum wells with N and In concentrations in the range of 2.5% and 30-40%, respectively. The low growth temperature used to prevent the decomposition of the unstable alloy is mainly responsible for the high density of non-radiative defects. The concomitant presence of both In and N induces...
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